[1] [1] SHE X, HUANG A Q, LUCA , et al. Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.

[2] [2] HUANG Y R, LECHNER B, WACHUTKA G. Comparative numerical analysis of the robustness of Si and SiC PiN diodes against cosmic radiation-induced failure[J]. Materials Science Forum, 2020, 1004: 1088-1096.

[3] [3] STEFFENS M, HFFGEN S K, KNDGEN T, et al. Single event sensitivity and de-rating of SiC power devices to heavy ions and protons[C]//19th European Conference on Radiation and Its Effects on Components and Systems. Montpellier, France. 2019: 1-5.

[4] [4] BALL D R, SIERAWSKI B D, GALLOWAY K F, et al. Estimating terrestrial neutron-induced SEB cross sections and FIT rates for high-voltage SiC power MOSFETs[J]. IEEE Transactions on Nuclear Science, 2019, 66(1): 337-343.

[5] [5] LAUENSTEIN J M, CASEY M C, LADBURY R L, et al. Space radiation effects on SiC power device reliability[C]//IEEE International Reliability Physics Symposium. Monterey, CA, USA. 2021: 1-8.

[6] [6] JOHNSON R A, WITULSKI A F, BALL D R, et al. Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes[J]. IEEE Transactions on Nuclear Science, 2020, 67(1): 135-139.

[7] [7] LAUENSTEIN J M, CASEY M, TOPPER A, et al. Silicon carbide power device performance under heavy-ion irradiation[C]//Proceedings of the Nuclear and Space Radiation Effects Conference (NSREC). Boston, MA, USA. 2015.

[8] [8] BALL D R, GALLOWAY K F, JOHNSON R A, et al. Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes[J]. IEEE Transactions on Nuclear Science, 2020, 67(1): 22-28.

[9] [9] WITULSKI A F, ARSLANBEKOV R, RAMAN A, et al. Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices[J]. IEEE Transactions on Nuclear Science, 2018, 65(1): 256-261.

[10] [10] BUSATTO G, IANNUZZO F, VELARDI F, et al. Non-destructive tester for single event burnout of power diodes[J]. Microelectronics Reliability, 2001, 41(9-10): 1725-1729.

[11] [11] CASEY M C, LAUENSTEIN J M, WEACHOCK R J, et al. Failure analysis of heavy ion-irradiated Schottky diodes[J]. IEEE Transactions on Nuclear Science, 2018, 65(1): 269-279.

[12] [12] SENGUPTA A, BALL D R, WITULSKI A F, et al. Impact of heavy-ion range on single-event effects in silicon carbide power junction barrier Schottky diodes[J]. IEEE Transactions on Nuclear Science, 2023, 70(4): 394-400.

[13] [13] JAVANAINEN A, TUROWSKI M, GALLOWAY K F, et al. Heavy-ion-induced degradation in SiC Schottky diodes: Incident angle and energy deposition dependence[J]. IEEE Transactions on Nuclear Science, 2017, 64(8): 2031-2037.

[14] [14] FANG X Y, SHU L, LI T D, et al. Comparative study of single-event effect tolerance between planar and trench SiC power MOSFETs[C]//5th International Conference on Radiation Effects of Electronic Devices. Kunming, China. 2023: 1-4.

[15] [15] LIU K Y, TANG X Y, YUAN H, et al. Sensitivity and mechanism study of single-event burnout in 4H-SiC devices with FLRs termination[J]. IEEE Transactions on Electron Devices, 2023, 70(6): 3196-3201.

[16] [16] YUAN J, GUO F, WANG K, et al. Demonstration of an 1200V/20A 4H-SiC multi-step trenched junction barrier Schottky diode[C]//19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors. Suzhou, China. 2023: 1-3.

[17] [17] KYOUNG S, JUNG E S, KANG T Y, et al. Improving current density of 4H–SiC junction barrier Schottky diode with wide trench etching[J]. Journal of Nanoscience and Nanotechnology, 2016, 16(11): 11686-11691.

[18] [18] DOU W T, SONG Q W, YUAN H, et al. Design and fabrication of high performance 4H-SiC TJBS diodes[J]. Journal of Crystal Growth, 2020, 533: 125421.

[19] [19] CHEN J H, WANG Y, GUO H M, et al. TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes[J]. Microelectronics Reliability, 2022, 139: 114865.

[20] [20] HOHL J H, JOHNNSON G H. Features of the triggering mechanism for single event burnout of power MOSFETs[J]. IEEE Transactions on Nuclear Science, 1989, 36(6): 2260-2266.

[21] [21] KUBOYAMA S, MIZUTA E, NAKADA Y, et al. Thermal runaway in SiC Schottky barrier diodes caused by heavy ions[J]. IEEE Transactions on Nuclear Science, 2019, 66(7): 1688-1693.

[22] [22] PENG C. Study on failure mechan isms of SiC power devices induced by heavy ion irradiation[C]//5th International Conference on Radiation Effects of Electronic Devices. Kunming, China. 2023: 1-5.

[23] [23] NAKADA Y, KUBOYAMA S, MIZUTA E, et al. Behavior of damaged sites introduced by SEGR in silicon carbide power MOSFETs[C]//19th European Conference on Radiation and Its Effects on Components and Systems. Montpellier, France. 2019: 1-4.

[24] [24] LU J, LIU J W, TIAN X L, et al. Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2020, 67(9): 3698-3704.