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Microelectronics, Volume. 55, Issue 1, 40(2025)

Single-event Burnout Simulation Study of 1 200 V SiC Trench JBS

FU Chengwen1,2, HUANG Wende1,2, DONG Xiaoping1,2, LIU Yaosen1,2, MA Yao1,2, HUANG Mingmin1,2, GONG Min1,2, YANG Zhimei1,2, and LI Yun1,2
Author Affiliations
  • 1Key Laboratory of microelectronics, College of Physics, Sichuan University, Chengdu 610064, P. R. China
  • 2Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu 610064, P. R. China
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    FU Chengwen, HUANG Wende, DONG Xiaoping, LIU Yaosen, MA Yao, HUANG Mingmin, GONG Min, YANG Zhimei, LI Yun. Single-event Burnout Simulation Study of 1 200 V SiC Trench JBS[J]. Microelectronics, 2025, 55(1): 40

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    Paper Information

    Special Issue:

    Received: Jan. 14, 2025

    Accepted: Jun. 19, 2025

    Published Online: Jun. 19, 2025

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.250020

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology