SiC Schottky barrier diodes (SiC SBDs) are highly attractive for aerospace applications due to their low power consumption, high temperature tolerance, and high switching frequency. However, their resistance to single-event burnout (SEB) remains significantly below expectations. The SEB effect of a 1 200 V silicon carbide trench junction barrier Schottky (TJBS) diode was investigated using two-dimensional numerical simulations. The results revealed that the peak temperature distribution varies depending on the location of particle incidence. The single-event sensitive regions were identified as the P+/n− and n−/n+ junctions. To enhance the SEB resistance of these sensitive areas, a novel structure featuring a stratified P region and a Gaussian buffer layer was proposed, termed the SP-TJBS. Compared to the conventional TJBS structure, the peak temperature of the SP-TJBS structure is only 44.6% of that of the TJBS diode when ions hit the center of the Schottky junction, and it is only 52.2%–56.3% when ions hit the P+ region, demonstrating excellent single-event burnout resistance.