High Power Laser and Particle Beams, Volume. 37, Issue 3, 035015(2025)

Design of high-frequency, high-power density hybrid integrated power supply based on GaN high electron mobility transistors

Weilong Zhu1, Peng Wang2, Chenya Zheng1, and Pengfei Sun1
Author Affiliations
  • 1East China Institute of Microelectronics, Hefei 230088, China
  • 2National Laboratory of Science and Technology on Analog Integrated Circuit, Chongqing 400060, China
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    References(16)

    [2] [2] Wang Hao. Interconnect materials processes f packaging thick film HIC[D]. Harbin: Harbin Institute of Technology, 2014

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    [7] Cheng Zhe. Thermal science and engineering in third-generation semiconductor materials and devices[J]. Acta Physica Sinica, 70, 236502(2021).

    [8] [8] Zhang Zongfeng. Research on interconnect structure modeling GaN HEMT thermal analysis methods in advanced packaging systems[D]. Hangzhou: Hangzhou Dianzi University, 2023

    [9] Zhao Zhengping. New advances in GaN high frequency switch power electronics[J]. Semiconductor Technology, 41, 1-9(2016).

    [11] [11] Cui Meiting. Research on acteristics applications of GaN device[D]. Beijing: Beijing Jiaotong University, 2015

    [13] [13] Wang Ruidong. Research on fward active clamping voltage mode switching power supply[D]. Xi’an: Xidian University, 2021

    [14] Chen Wei, Li Jun. Application of power dissipation design in high-power DC-DC converters[J]. Journal of Power Supply, 19, 52-60(2021).

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    Weilong Zhu, Peng Wang, Chenya Zheng, Pengfei Sun. Design of high-frequency, high-power density hybrid integrated power supply based on GaN high electron mobility transistors[J]. High Power Laser and Particle Beams, 2025, 37(3): 035015

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    Paper Information

    Category: Power Circuit Topology and Simulation Technology

    Received: Sep. 8, 2024

    Accepted: Feb. 16, 2025

    Published Online: Apr. 29, 2025

    The Author Email:

    DOI:10.11884/HPLPB202537.240318

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