High Power Laser and Particle Beams, Volume. 37, Issue 3, 035015(2025)

Design of high-frequency, high-power density hybrid integrated power supply based on GaN high electron mobility transistors

Weilong Zhu1, Peng Wang2, Chenya Zheng1, and Pengfei Sun1
Author Affiliations
  • 1East China Institute of Microelectronics, Hefei 230088, China
  • 2National Laboratory of Science and Technology on Analog Integrated Circuit, Chongqing 400060, China
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    Figures & Tables(12)
    Active clamp forward converter and key waveforms
    Block diagram of the overall circuit
    Schematic diagram of two types of GaN device structures
    GaN HEMT gate driver circuit and the simulation results
    Using hybrid integration to reduce parasitic inductance
    Active clamp and synchronous rectification dead time control
    Thick-film hybrid integrated circuit design for the DC-DC converter
    Thermal optimization design
    Thermal simulation result
    Test waveforms of the DC-DC converter
    Comparison of output power and efficiency of DC-DC converters
    • Table 1. Main device performance parameter comparison

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      Table 1. Main device performance parameter comparison

      deviceVDS,max/VID/ARDS(on)/mΩQg/nCCoss/pFQrr/nCdimensions/(mm×mm)
      SiR514DP10084.8531720565.15×6.15
      INN100W032A100603.29.246003.5×2.13
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    Weilong Zhu, Peng Wang, Chenya Zheng, Pengfei Sun. Design of high-frequency, high-power density hybrid integrated power supply based on GaN high electron mobility transistors[J]. High Power Laser and Particle Beams, 2025, 37(3): 035015

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    Paper Information

    Category: Power Circuit Topology and Simulation Technology

    Received: Sep. 8, 2024

    Accepted: Feb. 16, 2025

    Published Online: Apr. 29, 2025

    The Author Email:

    DOI:10.11884/HPLPB202537.240318

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