High Power Laser and Particle Beams, Volume. 36, Issue 3, 031003(2024)

Performance research and parameter optimization of 15 nm Bulk nFinFET device

Tianhao Hou1, Jieqing Fan1, Qiang Zhao2、*, Fang Zhang2, Jianhong Hao1, and Zhiwei Dong2
Author Affiliations
  • 1School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • 2Institute of Applied Physics and Computational Mathematics, CAEP, Beijing 100094, China
  • show less
    Figures & Tables(20)
    Schematic diagram of FinFET model
    Comparison of Id-Vg curves with and without quantum correction items
    Id-Vg curves with different gate lengths
    Id-Vd curves with different gate lengths
    Id-Vg curves with different fin widths (Vd = 0.05 V)
    Id-Vd curves with different fin widths (Vg = 0.8 V)
    Id-Vg curves with different fin heights (Vd = 0.05 V)
    Id-Vd curves with different fin heights (Vg = 0.8 V)
    Schematic diagram of doping
    Id-Vg curves with different channel doping concentrations
    Id-Vd curves with different channel doping concentrations
    Id-Vg curves with different device temperatures
    Schematic of gate oxide layer material
    Id-Vg curves with different gate materials
    • Table 1. VT, SS and DIBL under different gate lengths

      View table
      View in Article

      Table 1. VT, SS and DIBL under different gate lengths

      gate length/nmVT/VSS/mVDIBL/(mV·V−1)
      100.305872.084520.53
      150.304167.626818.55
      200.308265.196012.57
      250.311764.07440.92
      300.314963.46910.80
    • Table 2. VT, SS and DIBL under different fin widths

      View table
      View in Article

      Table 2. VT, SS and DIBL under different fin widths

      fin width/nmVT/VSS/mVDIBL/(mV·V−1)
      10.304167.62695.42
      30.317875.174510.84
      50.324182.869718.53
      70.330689.739225.62
    • Table 3. VT, SS and DIBL under different fin heights

      View table
      View in Article

      Table 3. VT, SS and DIBL under different fin heights

      fin height/nmVT/VSS/mVDIBL/(mV·V−1)
      50.304570.522063.03
      80.305169.090961.46
      100.304167.626959.80
      150.298365.440857.38
      180.293767.144854.73
    • Table 4. VT, SS and DIBL under different channel doping concentrations

      View table
      View in Article

      Table 4. VT, SS and DIBL under different channel doping concentrations

      channel doping concentration/cm−3VT/VSS/mVDIBL/(mV·V−1)
      1×10130.304267.565221.19
      1×10150.304167.570421.33
      1×10170.304167.626919.70
      1×10190.316667.639244.29
      1×10210.617976.482597.29
    • Table 5. VT, SS and DIBL under different device temperatures

      View table
      View in Article

      Table 5. VT, SS and DIBL under different device temperatures

      device temperature/KVT/VSS/mVDIBL/(mV·V−1)
      3000.304167.626918.53
      3730.262086.602523.25
      4250.2282101.272827.31
    • Table 6. VT, SS and DIBL under different gate materials

      View table
      View in Article

      Table 6. VT, SS and DIBL under different gate materials

      gate materialsgmax/mSSS/mVVT/VDIBL/(mV·V−1)
      SiO28.87×10−665.340.281122.3
      Si3N49.19×10−664.810.272218.4
      HfO29.54×10−664.390.27366.4
    Tools

    Get Citation

    Copy Citation Text

    Tianhao Hou, Jieqing Fan, Qiang Zhao, Fang Zhang, Jianhong Hao, Zhiwei Dong. Performance research and parameter optimization of 15 nm Bulk nFinFET device[J]. High Power Laser and Particle Beams, 2024, 36(3): 031003

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jun. 5, 2023

    Accepted: Dec. 15, 2023

    Published Online: Mar. 20, 2024

    The Author Email: Qiang Zhao (zhaoq@iapcm.ac.cn)

    DOI:10.11884/HPLPB202436.230169

    Topics