Journal of Synthetic Crystals, Volume. 54, Issue 5, 857(2025)
Preparation Process of Emitter for p-Type TBC Cells
Figures & Tables(6)
Fig. 2. Schematic diagram of experimental sample （a） and p-type TBC cell structure （b）
Fig. 3. Thickness of tunneling oxide layer （a）， passivation effect （b）， and saturation current density （c） for different oxidation time
Fig. 4. Phosphorus doping distribution curves （a） and passivation effect （b） at different diffusion temperatures
Fig. 5. Phosphorus doping distribution curve （a） and passivation effect （b） with different N2-POCl3 flow rates
Table 1.
Process parameters for preparing TOPCon passivation structure films for different oxidation time View tableView in ArticleTable 1.
Process parameters for preparing TOPCon passivation structure films for different oxidation time Oxidation time/s Oxidation temperature/℃ Polysilicon deposition temperature/℃ Polysilicon thickness/nm 400 600 600 140 800 600 600 140 1 200 600 600 140 1 600 600 600 140 2 000 600 600 140
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Zhicheng SONG, Bo ZHANG, Chunfu ZHANG, Xiaoyong QU, Yufeng NI, Jiaqing GAO. Preparation Process of Emitter for p-Type TBC Cells[J]. Journal of Synthetic Crystals, 2025, 54(5): 857
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Received: Nov. 12, 2024
Accepted: --
Published Online: Jul. 2, 2025
The Author Email: Bo ZHANG (zhangbo02@spic.com.cn)
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