Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging

Da-Sheng CUI; Jia-Ming YANG; Hong-Xuan YAO; Xin LYU

doi:10.11972/j.issn.1001-9014.2021.02.008

Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 184(2021)

Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging

Da-Sheng CUI^*, Jia-Ming YANG, Hong-Xuan YAO, and Xin LYU

Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electrics, Beijing Institute of Technology, Beijing 100081, China

show less

Abstract Get PDF(in Chinese)

References(17)

[1] Peter H, Siegel . Terahertz technology[J]. IEEE Transactions on Microwave Theory and Techniques, 50, 910-928(2002).

[2] Zhu M, Li X, Chung S et al. Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode[J]. Carbon, 84, 138-145(2015).

[3] Dyakonov M, Shur M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid[J]. IEEE Transactions on Electron Devices, 43, 380-387(1996).

[4] Han S P, Park J W, Ko H et al. Terahertz imaging using InGaAs Schottky barrier diode array detectors[C](2013).

[5] Ryu M W, Lee J S, Kim K S et al. High-performance plasmonic THz detector based on asymmetric FET with vertically integrated antenna in CMOS technology[J]. IEEE Transactions on Electron Devices, 63, 1742-1748(2016).

[6] Knap W, Teppe F, Meziani Y et al. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors[J]. Applied Physics Letters, 85, 675-677(2004).

[7] Zhu M, Song B, Qi M et al. 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon[J]. IEEE Electron Device Letters, 36, 375-377(2015).

[8] Shim D, Sankaran S, K. K O . Complementary antiparallel Schottky barrier diode pair in a 0.13- Logic CMOS technology[J]. IEEE Electron Device Letters, 29, 606-608(2008).

[9] Seok E, Cao C, Sankaran S et al. A millimeter-wave Schottky Diode detector in 130-nm CMOS technology[C](2006).

[10] Han R, Zhang Y, Coquillat D et al. A 280-GHz Schottky diode detector in 130-nm digital CMOS[C], 2602-2612(2011).

[11] Han R, Zhang Y, Kim Y et al. Active terahertz imaging using Schottky diodes in CMOS: array and 860-GHz pixel[J]. IEEE Journal of Solid-State Circuits, 48, 2296-2308(2013).

[12] Han S P, Ko H, Kim N et al. Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector[J]. Optics Express, 22, 28977-83(2014).

[13] Chang W L, Meng C, Huang G W. SBD layout optimization with effect of N-well to p-substrate pn junctions in 0.18 μm CMOS process[C](2016).

[14] Rein H, Schroter M. Base spreading resistance of square-emitter transistors and its dependence on current crowding[J]. IEEE Transactions on Electron Devices, 36, 770-773(1989).

[15] Nan L, Mouthaan K, Xiong Y Z et al. Experimental characterization of the effect of metal dummy fills on spiral inductors[C](2007).

[16] Sankaran S, Kenneth K O. Schottky barrier diodes for millimeter wave detection in a foundry CMOS process[J]. IEEE Electron Device Letters, 26, 492-494(2005).

[17] Sankaran S, K. K O . Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 μm CMOS[J]. Electronics Letters, 41, 506-508(2005).

Tools

Get Citation

Copy Citation Text

Da-Sheng CUI, Jia-Ming YANG, Hong-Xuan YAO, Xin LYU. Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 184

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Research Articles

Received: Jun. 29, 2020

Accepted: --

Published Online: Aug. 31, 2021

The Author Email: Da-Sheng CUI (dscui@bit.edu.cn)

DOI:10.11972/j.issn.1001-9014.2021.02.008

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology