Fig. 1. Schematic diagram of CVD growth system and temperature distribution. (a) CVD growth system; (b) temperature distribution

Fig. 2. CVD epitaxial growth procedure

Fig. 3. Characterization of the Ga₂O₃ films grown under different carrier gases at a growth temperature of 650 ℃ and a growth time of 30 min. (a) XRD pattern; (b) Raman spectroscopy

Fig. 4. XRD pattern of Ga₂O₃ films at different growth temperatures. (a) (b) XRD pattern of samples grown at different temperatures; (c) AFM image of the film grown at 750 ℃; (d) SEM image of the film grown at 750 ℃; (e) height map of the films grown at 750 ℃

Fig. 5. Characterization of samples at different growth times, under the conditions of growth temperature of 750 ℃ and Ar as carrier gas. (a) XRD pattern of β-Ga₂O₃ films grown under different growth times; (b) AFM image of the β-Ga₂O₃ film grown at a growth time of 20 min