[1] Wang Huan, Qiao Hanqing, Cheng Jun. Conduction mechanism of base-triggered avalanche transistors[J]. Semiconductor Technology, 49, 432-441(2024).

[2] Ma Zhenhong, Liu Zhen, Yin Shengyong. Experimental study on melanoma cell ablation by high-voltage nanosecond pulsed electric field[J]. Journal of Zhejiang University (Engineering Science), 55, 1168-1174,1198(2021).

[3] Liang Lin, Yan Xiaoxue, Huang Xinyuan. Review on semiconductor pulsed power switching devices[J]. Proceedings of the CSEE, 42, 8631-8651(2022).

[4] Mesyats G A, Yalandin M I. High-power picosecond electronics[J]. Physics-Uspekhi, 48, 211-229(2005).

[5] Grekhov I V, Kardo-Sysoev A F, Kostina L S et al. High-power subnanosecond switch[J]. Electronics Letters, 17, 422-423(1981).

[6] Grekhov I V, Kardo-Sysoev A F. Subnanosecond current drops in delayed breakdown of silicon p-n junctions[J]. Soviet Technical Physics Letters, 5, 395-396(1979).

[7] Ivanov M S, Podolska N I, Rodin P B. Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections[J]. Journal of Physics: Conference Series, 816, 012033(2017).

[8] Rodin P B, Ivanov M. Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: from subnano to picosecond range[J]. Journal of Applied Physics, 127, 044504(2020).

[9] Ivanov M, Brylevskiy V, Smirnova I et al. Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: experiments vs simulations[J]. Journal of Applied Physics, 131, 014502(2022).

[10] Peng Xin, Liu Yong, Feng Hao et al. Analysis and characterization of the Punchthrough n-p-n diode for hard switching power control applications[J]. IEEE Transactions on Electron Devices, 70, 4525-4531(2023).

[11] Zhang Manhong. A modified finite difference model to the reverse recovery of silicon PIN diodes[J]. Solid-State Electronics, 171, 107839(2020).

[12] Brylevskiy V, Podolska N, Smirnova I et al. Picosecond-range avalanche switching initiated by a steep high-voltage pulse: Si bulk samples versus layered pn junction structures[J]. Physica Status Solidi (b), 256, 1800520(2019).

[13] Okuto Y, Crowell C R. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions[J]. Solid-State Electronics, 18, 161-168(1975).

[14] Potbhare S, Goldsman N, Lelis A et al. A physical model of high temperature 4H-SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 55, 2029-2040(2008).

[15] Brylevskiy V I, Smirnova I A, Podolska N I et al. Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without p-n junctions[J]. Technical Physics Letters, 44, 160-163(2018).

[16] [16] Huang Xinyuan. Study on optimal design failure analysis of fast ionization dynist[D]. Wuhan: Huazhong University of Science Technology, 2022: 6768

[17] [17] Zhou Yu. Research on 4HSiC plasma wave switching devices[D]. Xi''an: Xidian University, 2022: 3739

[18] Zhang Jiajia, Ye Shangbin, Zhang Yicheng. Temperature-variable dynamic modeling of PIN diode based on Laplace transform[J]. Transactions of China Electrotechnical Society, 31, 139-146(2016).

[19] Sheng Dingyi, Yang Geng, Tan Jichun. A new power PIN diode PSpice subcircuit model[J]. Modern Electronics Technique, 141-143(2008).

[20] Li Xin, Luo Yifei, Duan Yaoqiang. An improved lumped-charge circuit model for high power PIN diode[J]. Transactions of China Electrotechnical Society, 34, 506-515(2019).