High Power Laser and Particle Beams, Volume. 36, Issue 11, 115022(2024)
Intensive model of PIN diode based on delayed breakdown characteristics
Fig. 3. Voltage and current waveforms on the PIN obtained from the TCAD simulation
Fig. 5. Variation of electric field at different times during the conduction process
Fig. 8. Change of the conduction current over time in the PSpice simulation
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Shuaitao Zhang, Huibo Zhang, Zicheng Zhang. Intensive model of PIN diode based on delayed breakdown characteristics[J]. High Power Laser and Particle Beams, 2024, 36(11): 115022
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Received: Aug. 8, 2024
Accepted: Oct. 18, 2024
Published Online: Jan. 8, 2025
The Author Email: Huibo Zhang (zhanghuibo89@outlook.com)