High Power Laser and Particle Beams, Volume. 36, Issue 11, 115022(2024)

Intensive model of PIN diode based on delayed breakdown characteristics

Shuaitao Zhang1, Huibo Zhang1,2、*, and Zicheng Zhang1,2
Author Affiliations
  • 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 2State Key Laboratory of Pulsed Power Laser Technology, Changsha 410073, China
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    Figures & Tables(9)
    Physical model settings
    Hybrid circuit simulation settings
    Voltage and current waveforms on the PIN obtained from the TCAD simulation
    Carrier concentration change in the conduction process
    Variation of electric field at different times during the conduction process
    Base area equivalent circuit network
    Diode intensive model
    Change of the conduction current over time in the PSpice simulation
    • Table 1. Equivalent circuit parameter settings

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      Table 1. Equivalent circuit parameter settings

      RJ1RJ2RJ3RJ4RJ5Rlim/mΩRepiCJ1/µFCJ2/µFCJ3/µF
      159143911.80.087.51.50.83
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    Shuaitao Zhang, Huibo Zhang, Zicheng Zhang. Intensive model of PIN diode based on delayed breakdown characteristics[J]. High Power Laser and Particle Beams, 2024, 36(11): 115022

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    Paper Information

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    Received: Aug. 8, 2024

    Accepted: Oct. 18, 2024

    Published Online: Jan. 8, 2025

    The Author Email: Huibo Zhang (zhanghuibo89@outlook.com)

    DOI:10.11884/HPLPB202436.240252

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