Infrared and Laser Engineering, Volume. 51, Issue 5, 20210599(2022)
Effects of isolation trough on cleavage of InSb chip in InSb detector
[1] Liu Jiachen, Tang Xin, Ju Yonglin. Numerical simulation on the fast cooling-down process of a miniature infrared detector module[J]. Infrared and Laser Engineering, 44, 816-820(2015).
[2] Bai Wei, Zhao Chao, Liu Ming. Development and application of InSb crystal[J]. Journal of Synthetic Crystals, 49, 2230-2243(2020).
[3] Liang Jinzhi, Xu Changbin, Li Haiyan. Fabrication technology of InSb IR focal plane array[J]. Infrared, 40, 7-12(2019).
[4] Hu Weida, Li Qing, Chen Xiaoshuang, et al. Recent progress on advanced infrared photodetectors[J]. Acta Physica Sinica, 68, 120701(2019).
[5] Bai Wei. Development status of InSb infrared focal plane array detectors[J]. Infrared, 40, 1-14(2019).
[6] Wang Yang, Lu Xing, Meng Chao, et al. Thermal cycle characteristic of InSb focal plane array detector[J]. Infrared and Laser Engineering, 44, 3701-3706(2015).
[7] Lei Shengqiong. Development of InSb infrared material and devices at Kunming Institute of Physics[J]. Infrared and Laser Engineering, 36, 15-18(2007).
[8] Wang Wen, Zhang Xiaolei, Lv Yanqiu, et al. InSb infrared focal plane arrays detector based on Si wafer[J]. Infrared and Laser Engineering, 43, 1359-1363(2014).
[9] Mu Hongshan, Dong Suo, Liang Jinzhi. Study of dead pixels in InSb IRFPA detector[J]. Infrared, 31, 9-13(2010).
[10] Meng Qingduan, Zhang Xiaoling, Lv Yanqiu, et al. Function reconsideration of indium bump in InSb IRFPAs[J]. Optical and Quantum Electronics, 51, 304(2019).
[11] Heidari-Rarani M, Sayedain M. Finite element modeling strategies for 2D and 3D delamination propagation in composite DCB specimens using VCCT, CZM and XFEM approaches[J]. Theoretical and Applied Fracture Mechanics, 103, 102246(2019).
[12] Geng Hongyan, Zhou Zhou, Song Guofeng, et al. Flip chip bonding technology for IR detectors[J]. Infrared and Laser Engineering, 43, 722-726(2014).
[13] Yang D G, Ernst L J, van`t Hof C, et al. Vertical die crack stresses of flip chip induced in major package assembly processes[J]. Microelectronics Reliability, 40, 1533-1538(2000).
[14] Wang L, Yang J S, Ni J X, et al. Influence of cracks in APS-TBCs on stress around TGO during thermal cycling: A numerical simulation study[J]. Surface & Coatings Technology, 285, 98-112(2016).
[15] He Y, Moreira B E, Overson A, et al. Thermal characterization of an epoxy-based underfill material for flip chip packaging[J]. Thermochimica Acta, 357-358, 1-8(2000).
[16] Meng Qingduan, Zhang Xiaoling, Zhang Liwen, et al. Structural modeling of 128× 128 InSb focal plane array detector[J]. Acta Physica Sinica, 61, 190701(2012).
[17] Meng Qingduan, Yu Qian, Zhang Liwen, et al. Mechanical parameters selection in InSb focal plane array detector normal direction[J]. Acta Physica Sinica, 61, 226103(2012).
[18] Rybicki E F, Kanninen M F. A finite element calculation of stress intensity factors by a modified crack closure integral[J]. Engineering Fracture Mechanics, 9, 931-938(1977).
Get Citation
Copy Citation Text
Xiaohan Tian, Jiangfeng Zhang, Xiaoling Zhang, Qingduan Meng. Effects of isolation trough on cleavage of InSb chip in InSb detector[J]. Infrared and Laser Engineering, 2022, 51(5): 20210599
Category: Optical devices
Received: Aug. 24, 2021
Accepted: --
Published Online: Jun. 14, 2022
The Author Email: