Infrared and Laser Engineering, Volume. 51, Issue 5, 20210599(2022)
Effects of isolation trough on cleavage of InSb chip in InSb detector
Figures & Tables(6)
Fig. 1. Two-dimensional model of InSb IRFPAs (local model). (a) Without isolation trough; (b) With V-shaped isolation trough added; (c) Bottom of V-shaped isolation trough is connected with preset crack; (d) Preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm
Fig. 2. Coefficients of thermal expansion (CTE) depending on temperature for InSb, underfill and Silicon-ROIC
Fig. 3. (a) In-plane normal stress distribution of InSb front surface; (b) In-plane normal stress distribution in region of isolation trough existed
Fig. 4. Energy release rate of the preset crack connected with the bottom of V-shaped isolation trough
Fig. 5. Comparison of energy release rate between the preset crack connected directly with the bottom of V-shaped isolation trough and the preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm
Table 1. Mechanical parameters and specific sizes of InSb IRFPAs
View tableView in ArticleTable 1. Mechanical parameters and specific sizes of InSb IRFPAs
Materials Elastic modulus E/GPa Poison's ratiov Temperature T/K Length/mm×height/mm InSb 409 (In-plane) 0.35 77-300 10×0.01 123 (Z-direction) Underfill 0.0002/α 0.30 77-300 10×0.01 Silicon-ROIC 163 0.28 77-300 12.8×0.3
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Xiaohan Tian, Jiangfeng Zhang, Xiaoling Zhang, Qingduan Meng. Effects of isolation trough on cleavage of InSb chip in InSb detector[J]. Infrared and Laser Engineering, 2022, 51(5): 20210599
Paper Information
Category: Optical devices
Received: Aug. 24, 2021
Accepted: --
Published Online: Jun. 14, 2022
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