Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 12, 1553(2022)

Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips

Ming-shui HUANG1, Jun-yang NIE2,4, Ming-yang LIU1, Yang LI1, Kui PAN1, Li-ying DENG1, Tian-xi YANG2, Zhong-hang HUANG2,3, Jie SUN1,2,3、*, Qun YAN1,2,3, and Tai-liang GUO1,2
Author Affiliations
  • 1College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China
  • 2Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China
  • 3Rich Sense Electronics Technology Co.,Ltd.,Quanzhou 362200,China
  • 4Faculty of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an 710049,China
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    References(25)

    [23] FANG R. ICP etching study of Ⅲ-Ⅴ semiconductor materials and ITO films[D](2010).

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    Ming-shui HUANG, Jun-yang NIE, Ming-yang LIU, Yang LI, Kui PAN, Li-ying DENG, Tian-xi YANG, Zhong-hang HUANG, Jie SUN, Qun YAN, Tai-liang GUO. Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(12): 1553

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    Paper Information

    Category: Research Articles

    Received: Aug. 22, 2022

    Accepted: --

    Published Online: Nov. 30, 2022

    The Author Email: Jie SUN (jie.sun@fzu.edu.cn)

    DOI:10.37188/CJLCD.2022-0276

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