The fabrication of a high-resolution 1 920×1 080 active matrix GaN-based micro-display chip was presented in this paper. The patterning of the current spreading layer and mesa were completed with ICP (Inductively Coupled Plasma) dry etching in a single step, resulting in the so-called self-alignment processing. At the same time, HMDS (Hexamethyldisiloxane) was used to improve the adhesion of photoresist, that significantly improve the consistency and integrity of small-size mesa etching. Furthermore, the problem of unequal height of P-electrode and N-electrode in traditional flip-chip was solved by padding the N-electrode, which was beneficial to the bonding of display chip and driver chip. This chip had a size of 17.78 mm (0.7 in), a mesa size of 6 μm and a pixel pitch of 8 μm, and a high density of 3 129 PPI. The I-V curve of a single Micro-LED pixel was measured and illustrated, which showed a turn-on voltage of 3.5 V.