[1] [1] Hao Yue, Peng Jun, Yang Yintang. The Growth Methods of Wide Band-Gap Semiconductor SiC[M]. Beijing: Sciene Press, 2000

[2] [2] Wu Xiaojun, Jia Tianqing, Zhao Fuli et al.. Fabrication of Nanostructures on 6H SiC crystal induced by femtosecond laser\[J\]. Acta Optica Sinica, 2007, 27(1): 105～110

[3] [3] G. Wagner, J. Doerschel, A. Gerlitzke et al.. Surface preparation of 4H-SiC substrates for hot-wall CVD of SiC layers[J]. Appl Surface Science, 2001, 184: 55～59

[4] [4] G. Dufour, F. Rochet, G. Fischer et al.. SiC formation by reaction of Si(001) with acetylene: electronic structured and growth mode[J]. Phys. Rev. B, 1997, 56: 4266～4270

[5] [5] Zhu Jingtao, Zhang Shumin, Wang Pei et al.. SiC/Mg multilayer film reflective mirror at 30.4 nm\[J\]. Acta Optica Sinica, 2007, 27(4): 735～738

[6] [6] Yu Melnik, D. Tsvetkov, A. Pechnikov et al.. Characterization of AlN/SiC epitaxial wafers fabricated by hydride vapor phase epitaxy[J]. Phys. Stat. Sol. A, 2001, 188: 463～466

[7] [7] T. L. Chu, R. B. Campbell. Chemical etching of silicon carbide with hydrogen[J]. J. Electrochem. Soc., 1965, 112: 955～958

[8] [8] Wu Ziqin, Wang Bing. The Growth of Film[M]. Beijing: Science Press, 2001

[9] [9] H. J. Kim, R. F. Davis. Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films[J]. J. Appl. Phys., 1986, 60: 2897～2902

[10] [10] Mark D. Allendorf, Robert J. Kee. A model of silicon carbide chemical vapor deposition[J]. J. Electrochem. Soc., 1991, 138: 841～848

[11] [11] P. Lu, J. H. Edgar, O. J. Clembocki et al.. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition[J]. J. Crystal Growth, 2005, 285: 506～511

[12] [12] A. B. Chen, P. Srichaikul. Self-assembled visible-bandgap Ⅰ-Ⅵ quantum dots[J]. Phys. Stat. Sol. B, 1997, 202: 817～821

[13] [13] C. Persson, U. Lindefelt. Relativistic band structure calculation of cubic and hexagonal SiC polytypes[J]. J. Appl. Phys., 1997, 82: 5496～5501

[14] [14] G. L. Harris. Properties of Silicon Carbide[M]. INSPEC, 1995