[1] Gordeev N Y, Maximov M V, Zhukov A E. Transverse mode tailoring in diode lasers based on coupled large optical cavities[J]. Laser Physics, 27, 086201(2017).

[2] Gordeev N Y, Payusov A S, Shernyakov Y M et al. Transverse mode competition in narrow-ridge diode lasers[J]. Laser Physics, 29, 025003(2019).

[3] Karow M M, Frevert C, Platz R et al. Efficient 600-W-laser bars for long-pulse pump applications at 940 and 975 nm[J]. IEEE Photonics Technology Letters, 29, 1683-1686(2017).

[4] Chen F, Cui B F, Feng J Y et al. Research and progress of high-power semiconductor lasers with high beam quality[J]. Laser & Optoelectronics Progress, 60, 2100002(2023).

[5] Huang N B, Wu Y D. Design and implementation of high-linearity wavelength division multiplexing analog optical link[J]. Laser & Optoelectronics Progress, 60, 0506005(2023).

[6] Harding C M, Chen Y C, Dalby R J. Low-divergence single-mode ridge waveguide diode lasers[J]. IEEE Photonics Technology Letters, 3, 199-201(1991).

[7] Hempel M, Tomm J W, Elsaesser T et al. Analysis of 980 nm emitting single-spatial mode diode lasers at high power levels by complementary imaging techniques[J]. Proceedings of SPIE, 9348, 93480N(2015).

[8] Chen Y. A examination on high power 980 nm single-mode ridge quantum well semiconductor lasers[D], 20-28(2009).

[9] Liu B, Liu Y Y. High power 980 nm ridge waveguide semiconductor laser diode[J]. Laser & Optoelectronics Progress, 52, 091404(2015).

[10] Liu J, Li B Z, Chen F et al. The 980 nm pump laser with output power of 400 mW[J]. Study on Optical Communications, 63-68(2023).

[11] Yang G, Wong V, Rossin V et al. Grating stabilized high power 980 nm pump modules[C](2007).

[12] Sabourdy D, Desfarges-Berthelemot A, Kermene V et al. 975-nm single-mode laser source: external coherent combining of two pigtailed laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 10, 1033-1038(2004).

[13] Crump P, Erbert G, Wenzel H et al. Efficient high-power laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 19, 1501211(2013).

[14] Kaul T, Erbert G, Maassdorf A et al. Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers[J]. Proceedings of SPIE, 10514, 105140A(2018).

[15] Yuan Q H, Jing H Q, Zhong L et al. High-power and high-reliability 9XX-nm laser diode[J]. Chinese Journal of Lasers, 47, 0401006(2020).

[16] Zhou K, He L A, Li Y et al. High power 793 nm diode lasers[J]. Journal of Infrared and Millimeter Waves, 41, 685-689(2022).

[17] Fu P, Zhang Y C, Zhao T et al. Design and fabrication of high-efficiency and high-power 976 nm semiconductor laser chips[J/OL]. Chinese Journal of Lasers, 1-13. http:∥kns.cnki.net/kcms/detail/31.1339.tn.20231114.1001.002.html

[18] Chang J Y, Xiong C, Qi Q et al. 1550 nm high-power fundamental transverse mode semiconductor laser and its temperature characteristics[J]. Acta Optica Sinica, 43, 0714003(2023).

[19] Zhang N L, Jing H Q, Yuan Q H et al. High power 1060 nm tapered laser[J]. Acta Optica Sinica, 42, 0514002(2022).

[20] Crump P, Pietrzak A, Bugge F et al. 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers[J]. Applied Physics Letters, 96, 131110(2010).

[21] Akahane K, Yamamoto N, Kawanishi T. High characteristic temperature of highly stacked quantum-dot laser for 1.55-μm band[J]. IEEE Photonics Technology Letters, 22, 103-105(2010).