976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle

Zhennuo Wang; Li Zhong; Deshuai Zhang; Suping Liu; Zhipeng Pan; Jinyuan Chang; Tianjiang He; Xiaoyu Ma

doi:10.3788/AOS231905

Acta Optica Sinica, Volume. 44, Issue 8, 0814002(2024)

976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle

Zhennuo Wang^1,2, Li Zhong^1,2、*, Deshuai Zhang^1,2、**, Suping Liu¹, Zhipeng Pan^1,2, Jinyuan Chang^1,2, Tianjiang He^1,2, and Xiaoyu Ma^1,2

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(9)

$Refractive index and normalized optical field distribution of diode laser epitaxial structure$

Fig. 1. Refractive index and normalized optical field distribution of diode laser epitaxial structure

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Fig. 2. Light field distribution of ridge waveguide

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Fig. 3. P-I-V characteristic curves of ridge diode laser

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Fig. 4. Emission spectrum of ridge diode laser at maximum output power

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Fig. 5. Far-field intensity distribution of ridge diode laser

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Fig. 6. Horizontal far-field intensity distribution of ridge diode laser under different injection currents

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Fig. 7. P-I characteristics of ridge diode laser at different operating temperatures

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Fig. 8. Horizontal far-field intensity distribution of ridge diode laser at different temperatures

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Table 1. Epitaxial structure parameters of ridge diode laser

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Table 1. Epitaxial structure parameters of ridge diode laser

Layer order	Layer	Material	Thickness /μm	Doped concentration /cm^-3
9	Ohmic contact	GaAs	0.2	C: 1×10²⁰
8	Upper confinement	Al_0.4GaAs	0.7	C: 1×10¹⁸
7	Upper waveguide	Al_0.15GaAs	0.7	Undoped
6	Upper transition	Al_0.1GaAs	0.04	Undoped
5	Active region	InGaAs/GaAsP	-	Undoped
4	Lower transition	Al_0.1GaAs	0.04	Undoped
3	Lower waveguide	Al_0.15GaAs	1.6	Undoped
2	Lower confinement	Al_0.4GaAs	0.8	Si: 5×10¹⁷
1	Buffer layer	GaAs	0.5	Si: 1×10¹⁸
0	Substrate	GaAs	-	-

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Zhennuo Wang, Li Zhong, Deshuai Zhang, Suping Liu, Zhipeng Pan, Jinyuan Chang, Tianjiang He, Xiaoyu Ma. 976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle[J]. Acta Optica Sinica, 2024, 44(8): 0814002

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Paper Information

Category: Lasers and Laser Optics

Received: Dec. 11, 2023

Accepted: Feb. 2, 2024

Published Online: Apr. 18, 2024

The Author Email: Zhong Li (zhongli@semi.ac.cn), Zhang Deshuai (zhangdeshuai@semi.ac.cn)

DOI:10.3788/AOS231905

CSTR:32393.14.AOS231905

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology