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Chinese Journal of Lasers, Volume. 47, Issue 4, 403002(2020)

Structural, Optical, Chemical and Laser Damage Resistant Properties of HfO2 Films Deposited by Reactive Electron Beam Evaporation

Yu Zhen1,2,3, Zhang Weili1,3, Zhu Rui1,3, and Qi Hongji3、*
Author Affiliations
  • 1Thin Film Optics Laboratory, Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049, China
  • 3Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences, Shanghai 201800, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
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    References (32)
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    Figures & Tables(8)
    XRD spectra of HfO2 films deposited at different oxygen partial pressures

    Fig. 1. XRD spectra of HfO2 films deposited at different oxygen partial pressures

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    Refractive index dispersion spectra of HfO2 films deposited at different oxygen partial pressures

    Fig. 2. Refractive index dispersion spectra of HfO2 films deposited at different oxygen partial pressures

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    XPS spectra of HfO2 film. (a) XPS full spectrum of HfO2 film before etching; (b) fine XPS spectra of core-level Hf 4f during in-situ etching process; (c) fine XPS spectra of core-level O 1s during in-situ etching process

    Fig. 3. XPS spectra of HfO2 film. (a) XPS full spectrum of HfO2 film before etching; (b) fine XPS spectra of core-level Hf 4f during in-situ etching process; (c) fine XPS spectra of core-level O 1s during in-situ etching process

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    Variations of atomic ratio of O to Hf with etching time for HfO2 films deposited at different oxygen partial pressures

    Fig. 4. Variations of atomic ratio of O to Hf with etching time for HfO2 films deposited at different oxygen partial pressures

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    Laser damage resistance of HfO2 films deposited at different oxygen partial pressures. (a) Damage probability curves; (b) defect density

    Fig. 5. Laser damage resistance of HfO2 films deposited at different oxygen partial pressures. (a) Damage probability curves; (b) defect density

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    Weak absorptivity of HfO2 film variation with oxygen partial pressure

    Fig. 6. Weak absorptivity of HfO2 film variation with oxygen partial pressure

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    Typical damage morphology of HfO2 films deposited at different oxygen partial pressures at laser fluence slightly above 0% thresholds. (a), (b), and (c) 2.0×10-2 Pa; (d), (e), and (f) 2.5×10-2 Pa

    Fig. 7. Typical damage morphology of HfO2 films deposited at different oxygen partial pressures at laser fluence slightly above 0% thresholds. (a), (b), and (c) 2.0×10-2 Pa; (d), (e), and (f) 2.5×10-2 Pa

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    • Table 1. Deposition parameters of HfO2 films deposited with reactive electron beam evaporation

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      Table 1. Deposition parameters of HfO2 films deposited with reactive electron beam evaporation

      Oxygenpartialpressure /10-2 PaElectronbeamcurrent /mADamagethreshold at1064 nm /(J·cm-2)Gaussian distribution of defect threshold
      Mean value /(J·cm-2)Standard deviation /(J·cm-2)Defectdensity /mm-2
      2.0≈3271.66.64.181.8
      2.5≈3327.517.97.0137.9
      2.8≈3307.818.07.6114.0
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    Yu Zhen, Zhang Weili, Zhu Rui, Qi Hongji. Structural, Optical, Chemical and Laser Damage Resistant Properties of HfO2 Films Deposited by Reactive Electron Beam Evaporation[J]. Chinese Journal of Lasers, 2020, 47(4): 403002

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    Paper Information

    Category: materials and thin films

    Received: Sep. 14, 2019

    Accepted: --

    Published Online: Apr. 8, 2020

    The Author Email: Hongji Qi (qhj@siom.ac.cn)

    DOI:10.3788/CJL202047.0403002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology