Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 52, Issue 18, 1803031(2025)

Fabrication and Characterizations of 12-inch n-Type 4H-SiC Single Crystal Substrates (Invited)

Xianglong Yang1,2、***, Xixi Xiong1,2, Jiaxin Zhang1,2, Hongyu Shao1,2, Xiufang Chen1,2、*, Xuejian Xie1,2, Rongkun Wang1,2, Xiufei Hu1,2, Guanglei Zhong1,2, Guojian Yu3, Guojie Hu3, Muqing Zhang3, Xiaobo Hu1,2, and Xiangang Xu1,2、**
Author Affiliations
  • 1State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong , China
  • 2Institute of Novel Semiconductors, Shandong University, Jinan 250100, Shandong , China
  • 3Guangzhou Summit Crystal Semiconductor Co,. Ltd., Guangzhou 511458, Guangdong , China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
    Equations (0)
    References (18)
    Tools
    Paper Information
    Topics
    Figures & Tables(10)
    Assembly drawing of SiC single crystal growth

    Fig. 1. Assembly drawing of SiC single crystal growth

    Download full size
    Temperature fields corresponding to diameter expansion and quality optimization stages of 12-inch single crystal

    Fig. 2. Temperature fields corresponding to diameter expansion and quality optimization stages of 12-inch single crystal

    Download full size
    Schematic diagram of SiC diameter expansion (8 inch to 12 inch)

    Fig. 3. Schematic diagram of SiC diameter expansion (8 inch to 12 inch)

    Download full size
    Photographs of seed crystal in various sizes during diameter expansion process

    Fig. 4. Photographs of seed crystal in various sizes during diameter expansion process

    Download full size
    Photos showing n-type 12-inch 4H-SiC crystal ingot and substrate. (a) Crystal ingot; (b) substrate

    Fig. 5. Photos showing n-type 12-inch 4H-SiC crystal ingot and substrate. (a) Crystal ingot; (b) substrate

    Download full size
    Raman mapping of 12-inch n-type 4H-SiC substrate

    Fig. 6. Raman mapping of 12-inch n-type 4H-SiC substrate

    Download full size
    Micropipes (red dots) in the 12-inch n-type 4H-SiC substrate

    Fig. 7. Micropipes (red dots) in the 12-inch n-type 4H-SiC substrate

    Download full size
    Resistivity mapping of 12-inch n-type 4H-SiC substrate

    Fig. 8. Resistivity mapping of 12-inch n-type 4H-SiC substrate

    Download full size
    High-resolution XRD rocking curves of (004) plane for 12-inch 4H-SiC substrate

    Fig. 9. High-resolution XRD rocking curves of (004) plane for 12-inch 4H-SiC substrate

    Download full size
    TSD distribution in 12-inch 4H-SiC substrate (left) and enlarged dislocations morphology (right)

    Fig. 10. TSD distribution in 12-inch 4H-SiC substrate (left) and enlarged dislocations morphology (right)

    Download full size
    Tools

    Get Citation

    Copy Citation Text

    Xianglong Yang, Xixi Xiong, Jiaxin Zhang, Hongyu Shao, Xiufang Chen, Xuejian Xie, Rongkun Wang, Xiufei Hu, Guanglei Zhong, Guojian Yu, Guojie Hu, Muqing Zhang, Xiaobo Hu, Xiangang Xu. Fabrication and Characterizations of 12-inch n-Type 4H-SiC Single Crystal Substrates (Invited)[J]. Chinese Journal of Lasers, 2025, 52(18): 1803031

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Materials

    Received: Jun. 23, 2025

    Accepted: Jul. 21, 2025

    Published Online: Sep. 17, 2025

    The Author Email: Xianglong Yang (yangxl2016@sdu.edu.cn), Xiufang Chen (cxf@sdu.edu.cn), Xiangang Xu (xxu@sdu.edu.cn)

    DOI:10.3788/CJL250987

    CSTR:32183.14.CJL250987

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology