Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1931001(2022)

Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation

Xiaoxue Li1, Lingcheng Huang2, and Yongqin Hao1、*
Author Affiliations
  • 1State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Changchun 130022, Jilin, China
  • 2Beijing Opto-Electronics Technology Co., Ltd., Beijing 100015, China
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    Figures & Tables(11)
    Refractive index curves of H4 films at different substrate temperatures
    Atomic force microscope (AFM) images of surface morphology of H4 films at different substrate temperatures. (a) 125 ℃; (b) 150 ℃; (c) 175 ℃; (d) 200 ℃
    Refractive index curves of H4 films at different ion-beam densities
    AFM images of surface morphology of H4 films at different ion-beam densities. (a) 105 μA·cm-2; (b) 120 μA·cm-2; (c) 135 μA·cm-2; (d) 150 μA·cm-2
    Extinction coefficient of H4 films at substrate temperature of 175 ℃ and ion-beam density of 120 μA·cm-2
    Transmittance spectra of H4 films after post-treatment. (a) High temperature annealing; (b) plasma post-treatment
    Reflectance curves of HR films of different materials. Solid line is theoretical value and dotted line is measured value
    Damage morphology of HR films under laser power density of 600 MW/cm2. (a) HR films of TiO2; (b) HR films of Ta2O5; (c) HR films of H4
    • Table 1. Surface roughnesses of H4 films at different substrate temperatures

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      Table 1. Surface roughnesses of H4 films at different substrate temperatures

      T /℃Ra /nmRq /nm
      1250.5050.649
      1500.4500.574
      1750.4210.522
      2000.4310.565
    • Table 2. Surface roughnesses of H4 films at different ion-beam densities

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      Table 2. Surface roughnesses of H4 films at different ion-beam densities

      J /(μA·cm-2Ra /nmRq /nm
      1050.4550.577
      1200.4210.522
      1350.4740.602
      1500.6180.782
    • Table 3. Process parameters of three kinds of HR films

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      Table 3. Process parameters of three kinds of HR films

      G/(LH)^5/AnLnHVL /(nm·s-1VH /(nm·s-1dL /nmdH /nm
      (SiO2/TiO2)^51.462.300.60.3182.62122.70
      (SiO2/Ta2O5)^51.462.080.60.3193.30135.86
      (SiO2/H4)^51.462.070.60.2182.24127.47
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    Xiaoxue Li, Lingcheng Huang, Yongqin Hao. Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931001

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    Paper Information

    Category: Thin Films

    Received: Aug. 2, 2021

    Accepted: Sep. 24, 2021

    Published Online: Oct. 11, 2022

    The Author Email: Hao Yongqin (hyq72081220@aliyun.com)

    DOI:10.3788/LOP202259.1931001

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