[1] [1] Lu Dacheng, Duan Shukun. Metal organic vapor phase epitaxy base and application［M］. Beijing: Science Press, 2009.

[2] [2] Brunner F, Knauer A, Schenk T, et al. Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire［J］. Journal of Crystal Growth, 2008, 310(10): 2432-2438.

[3] [3] Yang Chaopu, Fang Wenqing, Liu Mingbao, et al. Comparative study on in situ infrared thermometry methods of MOCVD［J］. Journal of Applied Optics, 2016, 37(2): 297-302.

[4] [4] Wang Chao, Zhang Zezhan, Chen Lei, et al. In-situ monitoring technology for growth of III nitrides by metal organic chemical vapor deposition［J］. Journal of University of Electronic Science and Technology of China, 2016, 45(4): 650-658.

[5] [5] Jiang Fengyi, Liu Junlin, Wang Li, et al. High optical efficiency GaN based blue LED on silicon substrate［J］. Scientia Sinica Physica, Mechanica & Astronomica, 2015, 45(6): 067302.

[6] [6] Wang Xiaozeng. Range analysis of thermal stress and displacement of GaN films on Al2O3 substrate［J］. Laser & Optoelectronics Progress, 2015, 52(4): 041602.

[7] [7] Wang Wenge. Survey of radiation thermometry technology［J］. Journal of Astronautic Metrology and Measurement, 2015, 25(4): 20-24.

[8] [8] Lu Mengxi, Cao Jian. Application of infrared measurement technology in MOCVD［J］. Semiconductor Technology, 2007, 32(8): 689-691.

[9] [9] Yang Zheng, Yang Li, Zhang Shicheng, et al. Infrared temperature measurement technology on lambertian based on the dual temperature and dual-band method［J］. Journal of Engineering Thermophysics, 2013, 34(11): 2132-2135.

[10] [10] Ma Cuihong, Liu Junmi, Yang Youliang. Infrared thermal image of molten steel temperature measurement based on wavelet transform［J］. Laser & Optoelectronics Progress, 2015, 52(10): 101001.

[11] [11] Li Yang, Xia Xinlin, Fan Chao, et al. Error analysis of infrared temperature measurement for 3D non-isothermal porous layer［J］. Acta Optica Sinica, 2017, 37(5): 0504001.

[12] [12] Yang Chaopu, Fang Wenqing. Influence of atmosphere and pressures on infrared temperature measurement of MOCVD reactor［J］. Journal of Shangluo University, 2015, 29(4): 43-46.

[13] [13] Palik E D. Handbook of optical constants of solids［M］. Boston: Academic Press, 1985.

[14] [14] Yu G, Wang G, Ishikawa H, et al. Optical properties of wurzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method［J］. Applied Physics Letters, 1997, 70(24): 3209-3211.