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Laser & Optoelectronics Progress, Volume. 54, Issue 11, 111201(2017)

Comparative Study on In-Situ Infrared Thermometry of GaN Epitaxy on Different Substrates Prepared by MOCVD

Yang Chaopu1,2, Song Yafeng3, Fang Wenqing4、*, Liu Mingbao1,2, Li Chun1,2, and Zhang Meili1,2
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    Yang Chaopu, Song Yafeng, Fang Wenqing, Liu Mingbao, Li Chun, Zhang Meili. Comparative Study on In-Situ Infrared Thermometry of GaN Epitaxy on Different Substrates Prepared by MOCVD[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111201

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    Paper Information

    Category: Instrumentation, Measurement and Metrology

    Received: May. 9, 2017

    Accepted: --

    Published Online: Nov. 17, 2017

    The Author Email: Fang Wenqing (fwq@ncu.edu.cn)

    DOI:10.3788/lop54.111201

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology