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Journal of Synthetic Crystals, Volume. 51, Issue 9-10, 1673(2022)

Dislocations in 4H Silicon Carbide Single Crystals

YANG Guang1,2, LIU Xiaoshuang2,3, LI Jiajun2,3, XU Lingbo1, CUI Can1, PI Xiaodong2,3, YANG Deren2,3, and WANG Rong2,3
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  • 1[in Chinese]
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  • 3[in Chinese]
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    YANG Guang, LIU Xiaoshuang, LI Jiajun, XU Lingbo, CUI Can, PI Xiaodong, YANG Deren, WANG Rong. Dislocations in 4H Silicon Carbide Single Crystals[J]. Journal of Synthetic Crystals, 2022, 51(9-10): 1673

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    Received: Jul. 1, 2022

    Accepted: --

    Published Online: Nov. 18, 2022

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    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology