Fig. 1. (a) Schematic diagram of graphene/SWCNT film/GaAs vdW heterojunction photodetector structure; (b) SEM image of graphene/SWCNT film

Fig. 2. Typical J-V curves of graphene/SWCNT film/GaAs vdW heterojunction photodetector in (a) dark state and (b) AM 1.5G condition

Fig. 3. (a) (b) J-V curves of the graphene/SWCNT film/GaAs vdW heterojunction photodetector irradiated at different laser wavelengthes. (c) (d) Photoelectric response repeatability curves when irradiated by laser with different laser wavelengthes at zero bias

Fig. 4. Transient light response curve of the device under 405 nm laser irradiation

Fig. 5. The responsivity (a~b) and specific detectivity (c~d) of graphene/SWCNT film/GaAs vdW heterojunction photodetectors as a function of incident light power density under zero bias conditions

Fig. 6. Schematic diagram of the energy band structure of graphene/SWCNT film/GaAs vdW heterojunction exposed to light irradiaton