Chinese Journal of Lasers, Volume. 49, Issue 3, 0313002(2022)
Deep Etching Process of GaAs-Based Micro-Nano Grating Based on Multilayer Resist
Fig. 1. Process flow of electron beam lithography GaAs-based micro-nano grating based on multilayer resist
Fig. 3. Influences of resists on pattern of grating photoresist mask. (a) PMMA A8 resists; (b) multilayer resist
Fig. 5. Generation mechanism of grass phenomenon. (a) Gas ionization; (b) micro-mask generation; (c) micro-mask deposition; (d) etching
Fig. 7. Effects of RF power on grating, grass structure, and SiO2 hard mask. (a) Effects on grating etching depth and the ratio of grass structure depth to grating depth; (b) effects on GaAs and SiO2 mask etching rate and SiO2 mask thickness
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Jingjing Yang, Jie Fan, Xiaohui Ma, Yonggang Zou, Qiqi Wang. Deep Etching Process of GaAs-Based Micro-Nano Grating Based on Multilayer Resist[J]. Chinese Journal of Lasers, 2022, 49(3): 0313002
Category: micro and nano optics
Received: Apr. 27, 2021
Accepted: Jun. 15, 2021
Published Online: Jan. 18, 2022
The Author Email: Fan Jie (fanjie@cust.edu.cn), Ma Xiaohui (mxh@cust.edu.cn)