Fig. 1. Cross-section diagram of the PIN planar type photodiode

Fig. 2. The optical microscopy image of Φ1 mm detector

Fig. 3. Net acceptor concentration profiles measured by ECV

Fig. 4. Zn concentration profiles measured by SIMS

Fig. 5. PL spectrum of samples with different probe laser wavelengths：（a）only 532 nm probe；（b）only 1064 nm probe

Fig. 6. Measured C_d-V curves of the unannealed PD and annealed PD

Fig. 7. The C_d^-3-V curves and corresponding linear fitting curves of the unannealed PD and annealed PD

Fig. 8. Measured dark currents for Φ1 mm detectors with different annealing time raging form 260K to 300K：（a）260K；（b）270K；（c）280K；（d）290K；（e）300K

Fig. 9. The dark current density as a function of 1000/T at different reverse-bias voltage for Φ1 mm detectors of different annealing time：（a）annealing 0 min；（b）annealing 10 minTable 3 The thermal activation energy E_a of the unannealed PD and the annealed PD

Fig. 10. Dark current measured at 300K and fitted for Φ1 mm detectors of different annealing time：（a）annealing 0 min；（b）annealing 10 min

Fig. 11. The detectivity spectrum of detectors at 300K