Chinese Optics Letters, Volume. 13, Issue 10, 100401(2015)

Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research

Yang Shen1、*, Liang Chen1,2、**, Shuqin Zhang1, and Yunsheng Qian2
Author Affiliations
  • 1Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
  • 2School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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    References(36)

    [3] J. Zhang, Y. Yang, H. Jia. Chin. Opt. Lett., 11, 102304(2013).

    [5] H. Huang, D. Yan, G. Wang, F. Xie, G. Yang, S. Xiao, X. Gu. Chin. Opt. Lett., 12, 092301(2014).

    [22] M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, M. C. Payne. J. Phys. Condens. Matter, 14, 2217(2002).

    [34] F. Machuca. A thin film p-type GaN photocathode: prospect for a high performance electron emitter(2003).

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    Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian, "Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research," Chin. Opt. Lett. 13, 100401 (2015)

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    Paper Information

    Category: Detectors

    Received: Jun. 12, 2015

    Accepted: Jul. 31, 2015

    Published Online: Sep. 13, 2018

    The Author Email: Yang Shen (920778028@qq.com), Liang Chen (LChen@cjlu.edu.cn)

    DOI:10.3788/COL201513.100401

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