Chinese Optics Letters, Volume. 13, Issue 10, 100401(2015)
Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research
[1] N. Tripathi, L. D. Bell, S. Nikzad, F. Shahedipour-Sandvik. Appl. Phys. Lett., 97, 052107(2010).
[3] J. Zhang, Y. Yang, H. Jia. Chin. Opt. Lett., 11, 102304(2013).
[5] H. Huang, D. Yan, G. Wang, F. Xie, G. Yang, S. Xiao, X. Gu. Chin. Opt. Lett., 12, 092301(2014).
[10] M. Higashiwaki, S. Chowdhury, B. L. Swenson, U. K. Mishra. Appl. Phys. Lett., 97, 222104(2010).
[22] M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, M. C. Payne. J. Phys. Condens. Matter, 14, 2217(2002).
[34] F. Machuca. A thin film p-type GaN photocathode: prospect for a high performance electron emitter(2003).
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Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian, "Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research," Chin. Opt. Lett. 13, 100401 (2015)
Category: Detectors
Received: Jun. 12, 2015
Accepted: Jul. 31, 2015
Published Online: Sep. 13, 2018
The Author Email: Yang Shen (920778028@qq.com), Liang Chen (LChen@cjlu.edu.cn)