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Chinese Optics Letters, Volume. 13, Issue 10, 100401(2015)

Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research

Yang Shen1、*, Liang Chen1,2、**, Shuqin Zhang1, and Yunsheng Qian2
Author Affiliations
  • 1Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
  • 2School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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    (a) Clean (1×1) GaN(0001) surface model, (b) GaN(0001)-Cs surface model, (c) GaN(0001)-Cs-Cs surface model, (d) GaN(0001)-Cs-Cs-O surface model, (e) GaN(0001)-Cs-Cs-O-Cs surface model, (f) GaN(0001)-Cs-Cs-O-Cs-Cs surface model, and (g) GaN(0001)-Cs-Cs-O-Cs-Cs-O. The dotted lines indicate the range of each layer.

    Fig. 1. (a) Clean (1×1) GaN(0001) surface model, (b) GaN(0001)-Cs surface model, (c) GaN(0001)-Cs-Cs surface model, (d) GaN(0001)-Cs-Cs-O surface model, (e) GaN(0001)-Cs-Cs-O-Cs surface model, (f) GaN(0001)-Cs-Cs-O-Cs-Cs surface model, and (g) GaN(0001)-Cs-Cs-O-Cs-Cs-O. The dotted lines indicate the range of each layer.

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    Variation of the photocurrent during the Cs/O activation process and stability testing of a NEA GaN photocathode.

    Fig. 2. Variation of the photocurrent during the Cs/O activation process and stability testing of a NEA GaN photocathode.

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    Variation curves of the QE of a NEA GaN photocathode after 6 h of decay.

    Fig. 3. Variation curves of the QE of a NEA GaN photocathode after 6 h of decay.

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    Schematic surface barrier and energy band variations of an R-mode NEA GaN photocathode before and after decay.

    Fig. 4. Schematic surface barrier and energy band variations of an R-mode NEA GaN photocathode before and after decay.

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    Formation of a [GaN (Mg): Cs] dipole and a Cs-O dipole.

    Fig. 5. Formation of a [GaN (Mg): Cs] dipole and a Cs-O dipole.

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    • Table 1. The Calculated Values of Adsorption Energies and Work Functions for Different Surface Models, “+” Means Increment while “−” Means Decrement

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      Table 1. The Calculated Values of Adsorption Energies and Work Functions for Different Surface Models, “+” Means Increment while “−” Means Decrement

      Modelabcdefg
      Eads (eV)0.367.189.240.180.272.18
      ϕ (eV)4.182.522.596.491.591.572.46
      Δϕ (eV)−1.66+0.07+3.90−4.90−0.02+0.89
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    Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian, "Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research," Chin. Opt. Lett. 13, 100401 (2015)

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    Paper Information

    Category: Detectors

    Received: Jun. 12, 2015

    Accepted: Jul. 31, 2015

    Published Online: Sep. 13, 2018

    The Author Email: Yang Shen (920778028@qq.com), Liang Chen (LChen@cjlu.edu.cn)

    DOI:10.3788/COL201513.100401

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology