[1] Won R. Integrating silicon photonics[J]. Nature Photonics, 4, 498-499(2010).

[2] Zhou Z P, Yin B, Michel J. On-chip light sources for silicon photonics[J]. Light: Science & Applications, 4, e358(2015).

[3] Heck M J R, Bauters J F, Davenport M L et al. Ultra-low loss waveguide platform and its integration with silicon photonics[J]. Laser & Photonics Reviews, 8, 667-686(2014).

[4] Su Y K, Zhang Y, Qiu C Y et al. Silicon photonic platform for passive waveguide devices: materials, fabrication, and applications[J]. Advanced Materials Technologies, 5, 1901153(2020).

[5] Reed G T, Mashanovich G, Gardes F Y et al. Silicon optical modulators[J]. Nature Photonics, 4, 518-526(2010).

[6] Rahim A, Hermans A, Wohlfeil B et al. Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies[J]. Advanced Photonics, 3, 024003(2021).

[7] Mauthe S, Baumgartner Y, Sousa M et al. High-speed Ⅲ‒Ⅴ nanowire photodetector monolithically integrated on Si[J]. Nature Communications, 11, 4565(2020).

[8] Liu C Y, Guo J S, Yu L W et al. Silicon/2D-material photodetectors: from near-infrared to mid-infrared[J]. Light: Science & Applications, 10, 123(2021).

[9] Wen P Y, Tiwari P, Mauthe S et al. Waveguide coupled Ⅲ‒Ⅴ photodiodes monolithically integrated on Si[J]. Nature Communications, 13, 909(2022).

[10] Ng W L, Lourenço M A, Gwilliam R M et al. An efficient room-temperature silicon-based light-emitting diode[J]. Nature, 410, 192-194(2001).

[11] Rong H S, Jones R, Liu A S et al. A continuous-wave Raman silicon laser[J]. Nature, 433, 725-728(2005).

[12] Fujii M, Yoshida M, Kanzawa Y et al. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Si nanocrystals to Er3+[J]. Applied Physics Letters, 71, 1198-1200(1997).

[13] Polman A, Min B, Kalkman J et al. Ultralow-threshold erbium-implanted toroidal microlaser on silicon[J]. Applied Physics Letters, 84, 1037-1039(2004).

[14] Dutt B, Sukhdeo D S, Nam D et al. Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping[J]. IEEE Photonics Journal, 4, 2002-2009(2012).

[15] El Kurdi M, Fishman G, Sauvage S et al. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism[J]. Journal of Applied Physics, 107, 013710(2010).

[16] Stange D, von den Driesch N, Zabel T et al. GeSn/SiGeSn heterostructure and multi quantum well lasers[J]. ACS Photonics, 5, 4628-4636(2018).

[17] Zhou Y Y, Dou W, Du W et al. Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si[J]. ACS Photonics, 6, 1434-1441(2019).

[18] Wirths S, Geiger R, von den Driesch N et al. Lasing in direct-bandgap GeSn alloy grown on Si[J]. Nature Photonics, 9, 88-92(2015).

[19] Zhou Y Y, Miao Y H, Ojo S et al. Electrically injected GeSn lasers on Si operating up to 100 K[J]. Optica, 7, 924-928(2020).

[20] Hudait M K, Murphy-Armando F, Saladukha D et al. Design, theoretical, and experimental investigation of tensile-strained germanium quantum-well laser structure[J]. ACS Applied Electronic Materials, 3, 4535-4547(2021).

[21] Volodin V A, Sokolov L V, Pytyato M A et al. Optical properties of tensile-strained and relaxed Ge films grown on InGaAs buffer[J]. Journal of Applied Physics, 115, 053518(2014).

[22] Fadaly E M T, Dijkstra A, Suckert J R et al. Direct-bandgap emission from hexagonal Ge and SiGe alloys[J]. Nature, 580, 205-209(2020).

[23] Li Z, Liu M F, Xiang C. Progress and applications of heterogeneously integrated lasers (invited)[J]. Laser & Optoelectronics Progress, 61, 1913005(2024).

[24] Roelkens G, van Campenhout J, Brouckaert J et al. Ⅲ‒Ⅴ/Si photonics by die-to-wafer bonding[J]. Materials Today, 10, 36-43(2007).

[25] Guo X H, He A, Su Y K. Recent advances of heterogeneously integrated Ⅲ‒Ⅴ laser on Si[J]. Journal of Semiconductors, 40, 101304(2019).

[26] Luo X S, Cao Y L, Song J F et al. High-throughput multiple dies-to-wafer bonding technology and Ⅲ/Ⅴ-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits. Frontiers in Materials, 28(2015).

[27] Liang D, Roelkens G, Baets R et al. Hybrid integrated platforms for silicon photonics[J]. Materials, 3, 1782-1802(2010).

[28] Buffolo M, De Santi C, Norman J et al. A review of the reliability of integrated IR laser diodes for silicon photonics[J]. Electronics, 10, 2734(2021).

[29] Wang Z H, Wang T, Zhang J J. Development and thinking of silicon photonics heterogenous integration[J]. Bulletin of Chinese Academy of Sciences, 37, 360-367(2022).

[30] Zhang N, Xie Q J, Na Q X et al. Research progress on silicon-based quantum dot lasers[J]. Chinese Journal of Luminescence, 44, 2011-2026(2023).

[31] Yan Z, Li Q. Recent progress in epitaxial growth of dislocation tolerant and dislocation free Ⅲ‒Ⅴ lasers on silicon[J]. Journal of Physics D, 57, 213001(2024).

[32] Hussin R J, Karomi I B. Progressing in Ⅲ‒Ⅴ semiconductor quantum dot lasers grown directly on silicon: a review[J]. Silicon, 16, 5457-5470(2024).

[33] Wei W Q, Feng Q, Wang Z H et al. Perspective: optically-pumped Ⅲ‒Ⅴ quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates[J]. Journal of Semiconductors, 40, 101303(2019).

[34] Pan S J, Cao V, Liao M Y et al. Recent progress in epitaxial growth of Ⅲ‒Ⅴ quantum-dot lasers on silicon substrate[J]. Journal of Semiconductors, 40, 101302(2019).

[35] Lasky J B. Wafer bonding for silicon-on-insulator technologies[J]. Applied Physics Letters, 48, 78-80(1986).

[36] Pasquariello D, Hedlund C, Hjort K. Oxidation and induced damage in oxygen plasma in situ wafer bonding[J]. Journal of the Electrochemical Society, 147, 2699(2000).

[37] Pasquariello D, Hjort K. Plasma-assisted InP-to-Si low temperature wafer bonding[J]. IEEE Journal of Selected Topics in Quantum Electronics, 8, 118-131(2002).

[38] Roelkens G, Liu L, Liang D et al. Ⅲ‒Ⅴ/silicon photonics for on-chip and intra-chip optical interconnects[J]. Laser & Photonics Reviews, 4, 751-779(2010).

[39] Keyvaninia S, Muneeb M, Stanković S et al. Ultra-thin DVS-BCB adhesive bonding of Ⅲ‒Ⅴ wafers, dies and multiple dies to a patterned silicon-on-insulator substrate[J]. Optical Materials Express, 3, 35-46(2013).

[40] Fang A W, Park H, Cohen O et al. Electrically pumped hybrid AlGaInAs-silicon evanescent laser[J]. Optics Express, 14, 9203-9210(2006).

[41] Park H, Fang A W, Kodama S et al. Hybrid silicon evanescent laser fabricated with a silicon waveguide and Ⅲ‒Ⅴ offset quantum wells[J]. Optics Express, 13, 9460-9464(2005).

[42] Chang H H, Fang A W, Sysak M N et al. 1310 nm silicon evanescent laser[J]. Optics Express, 15, 11466-11471(2007).

[43] Liang D, Bowers J E. Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate[J]. Journal of Vacuum Science Technology B, 26, 1560-1568(2008).

[44] Fang A W, Lively E, Kuo Y H et al. A distributed feedback silicon evanescent laser[J]. Optics Express, 16, 4413-4419(2008).

[45] Liang D, Huang X, Kurczveil G et al. Integrated finely tunable microring laser on silicon[J]. Nature Photonics, 10, 719-722(2016).

[46] Wang Z C, Van Gasse K, Moskalenko V et al. A Ⅲ‒Ⅴ-on-Si ultra-dense comb laser[J]. Light: Science & Applications, 6, e16260(2016).

[47] Uvin S, Kumari S, De Groote A et al. 1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding[J]. Optics Express, 26, 18302-18309(2018).

[48] Wan Y T, Xiang C, Guo J et al. High speed evanescent quantum-dot lasers on Si[J]. Laser & Photonics Reviews, 15, 2100057(2021).

[49] Yoon J, Lee S M, Kang D et al. Heterogeneously integrated optoelectronic devices enabled by micro-transfer printing[J]. Advanced Optical Materials, 3, 1313-1335(2015).

[50] Maeda Y, Aihara T, Fujii T et al. Micro-transfer-printed membrane distributed reflector lasers on Si waveguide modulated with 50-Gbit/s NRZ signal[J]. Journal of Lightwave Technology, 41, 3866-3873(2023).

[51] Roelkens G, Zhang J, Bogaert L et al. Micro-transfer printing for heterogeneous Si photonic integrated circuits[J]. IEEE Journal of Selected Topics in Quantum Electronics, 29, 8200414(2023).

[52] Menard E, Lee K J, Khang D Y et al. A printable form of silicon for high performance thin film transistors on plastic substrates[J]. Applied Physics Letters, 84, 5398-5400(2004).

[53] Meitl M A, Zhu Z T, Kumar V et al. Transfer printing by kinetic control of adhesion to an elastomeric stamp[J]. Nature Materials, 5, 33-38(2006).

[54] Haq B, Kumari S, van Gasse K et al. Micro-transfer-printed Ⅲ‒Ⅴ-on-silicon C-band semiconductor optical amplifiers[J]. Laser & Photonics Reviews, 14, 1900364(2020).

[55] Goyvaerts J, Grabowski A, Gustavsson J et al. Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing[J]. Optica, 8, 1573-1580(2021).

[56] Zhang J, Bogaert L, Haq B et al. Ⅲ‒Ⅴ-on-Si DFB laser with co-integrated power amplifier realized using micro-transfer printing[J]. IEEE Photonics Technology Letters, 35, 593-596(2023).

[57] Roelkens G, Zhang J, Bogaert L et al. Present and future of micro-transfer printing for heterogeneous photonic integrated circuits[J]. APL Photonics, 9, 010901(2024).

[58] de Beeck C O, Haq B, Elsinger L et al. Heterogeneous Ⅲ‒Ⅴ on silicon nitride amplifiers and lasers via microtransfer printing[J]. Optica, 7, 386-393(2020).

[59] Soltanian E, Muliuk G, Uvin S et al. Micro-transfer-printed narrow-linewidth Ⅲ‒Ⅴ-on-Si double laser structure with a combined 110 nm tuning range[J]. Optics Express, 30, 39329-39339(2022).

[60] Pan B W, Bourderionnet J, Billault V et al. Ⅲ‒Ⅴ-on-Si3N4 widely tunable narrow-linewidth laser based on micro-transfer printing[J]. Photonics Research, 12, 2508-2520(2024).

[61] Yang W Y, Li Y J, Meng F Y et al. Ⅲ‒Ⅴ compound materials and lasers on silicon[J]. Journal of Semiconductors, 40, 101305(2019).

[62] Du Y, Xu B Q, Wang G L et al. Review of highly mismatched Ⅲ‒Ⅴ heteroepitaxy growth on (001) silicon[J]. Nanomaterials, 12, 741(2022).

[63] Jung D, Norman J, Wan Y T et al. Recent advances in InAs quantum dot lasers grown on on-axis (001) silicon by molecular beam epitaxy[J]. Physica Status Solidi (a), 216, 1800602(2019).

[64] Park J S, Tang M C, Chen S M et al. Heteroepitaxial growth of Ⅲ‒Ⅴ semiconductors on silicon[J]. Crystals, 10, 1163(2020).

[65] Zhou Z C, Ou X P, Fang Y T et al. Prospects and applications of on-chip lasers[J]. eLight, 3, 1-25(2023).

[66] Han Y, Park H, Bowers J et al. Recent advances in light sources on silicon[J]. Advances in Optics and Photonics, 14, 404-454(2022).

[67] Liu H Y, Wang T, Jiang Q et al. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate[J]. Nature Photonics, 5, 416-419(2011).

[68] Wang T, Liu H Y, Lee A et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates[J]. Optics Express, 19, 11381-11386(2011).

[69] Chen S M, Li W, Wu J et al. Electrically pumped continuous-wave Ⅲ‒Ⅴ quantum dot lasers on silicon[J]. Nature Photonics, 10, 307-311(2016).

[70] Volz K, Beyer A, Witte W et al. GaP-nucleation on exact Si (001) substrates for Ⅲ/Ⅴ device integration[J]. Journal of Crystal Growth, 315, 37-47(2011).

[71] Alcotte R, Martin M, Moeyaert J et al. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility[J]. APL Materials, 4, 046101(2016).

[72] Li Q, Ng K W, Lau K M. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon[J]. Applied Physics Letters, 106, 072105(2015).

[73] Wei W Q, Wang J H, Zhang B et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. Applied Physics Letters, 113, 053107(2018).

[74] Jung D, Callahan P G, Shin B et al. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)[J]. Journal of Applied Physics, 122, 225703(2017).

[75] Kunert B, Mols Y, Baryshniskova M et al. How to control defect formation in monolithic Ⅲ/Ⅴ hetero-epitaxy on (100) Si A critical review on current approaches[J]. Semiconductor Science and Technology, 33, 093002(2018).

[76] Li Q, Zhou X J, Tang C W et al. Material and device characteristics of metamorphic In0.53Ga0.47As MOSHEMTs grown on GaAs and Si substrates by MOCVD[J]. IEEE Transactions on Electron Devices, 60, 4112-4118(2013).

[77] Tang M C, Chen S M, Wu J et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers[J]. Optics Express, 22, 11528-11535(2014).

[78] Shang C, Selvidge J, Hughes E et al. A pathway to thin GaAs virtual substrate on on-axis Si (001) with ultralow threading dislocation density[J]. Physica Status Solidi A, 218, 2000402(2021).

[79] Selvidge J, Norman J, Hughes E T et al. Defect filtering for thermal expansion induced dislocations in Ⅲ‒Ⅴ lasers on silicon[J]. Applied Physics Letters, 117, 122101(2020).

[80] Saravanan S, Hayashi Y, Soga T et al. Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy[J]. Journal of Applied Physics, 89, 5215-5218(2001).

[81] Saravanan S, Adachi M, Satoh N et al. Stress reduction and structural quality improvement due to in doping in GaAs/Si[J]. Materials Science and Engineering B, 68, 166-170(2000).

[82] Oh S, Jun D H, Shin K W et al. Control of crack formation for the fabrication of crack-free and self-isolated high-efficiency gallium arsenide photovoltaic cells on silicon substrate[J]. IEEE Journal of Photovoltaics, 6, 1031-1035(2016).

[83] Huang H, Ren X M, Lv J H et al. Crack-free GaAs epitaxy on Si by using midpatterned growth: application to Si-based wavelength-selective photodetector[J]. Journal of Applied Physics, 104, 113114(2008).

[84] Shang C, Begley M R, Gianola D S et al. Crack propagation in low dislocation density quantum dot lasers epitaxially grown on Si[J]. APL Materials, 10, 011114(2022).

[85] Wei W Q, Huang J Z, Ji Z T et al. Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation[J]. Journal of Physics D, 55, 405105(2022).

[86] Zhang J Y, Wei W Q, Wang J H et al. Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate[J]. Optical Materials Express, 10, 1045-1052(2020).

[87] Li S, Zhou X, Li M et al. Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate[J]. Applied Physics Letters, 108, 021902(2016).

[88] Han Y, Lau K M. Ⅲ‒Ⅴ lasers selectively grown on (001) silicon[J]. Journal of Applied Physics, 128, 200901(2020).

[89] Kunert B, Guo W, Mols Y et al. Ⅲ/Ⅴ nano ridge structures for optical applications on patterned 300 mm silicon substrate[J]. Applied Physics Letters, 109, 091101(2016).

[90] Yan Z, Ratiu B P, Zhang W W et al. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator[J]. Crystal Growth & Design, 23, 7821-7828(2023).

[91] Han Y, Ng W K, Xue Y et al. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator[J]. Optics Letters, 44, 767-770(2019).

[92] Wang Z C, Tian B, Pantouvaki M et al. Room-temperature InP distributed feedback laser array directly grown on silicon[J]. Nature Photonics, 9, 837-842(2015).

[93] de Koninck Y, Caer C, Yudistira D et al. GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line[J]. Nature, 637, 63-69(2025).

[94] Mi Z, Yang J, Bhattacharya P et al. Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon[J]. Electronics Letters, 42, 121-123(2006).

[95] Liu A Y, Peters J, Huang X et al. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si[J]. Optics Letters, 42, 338-341(2017).

[96] Norman J, Kennedy M J, Selvidge J et al. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si[J]. Optics Express, 25, 3927-3934(2017).

[97] Chen S M, Liao M Y, Tang M C et al. Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates[J]. Optics Express, 25, 4632-4639(2017).

[98] Kwoen J, Jang B, Lee J et al. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)[J]. Optics Express, 26, 11568-11576(2018).

[99] Inoue D, Jung D, Norman J et al. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon[J]. Optics Express, 26, 7022-7033(2018).

[100] Wan Y T, Zhang S, Norman J C et al. Tunable quantum dot lasers grown directly on silicon[J]. Optica, 6, 1394-1400(2019).

[101] Wan Y T, Norman J C, Tong Y Y et al. 1.3 µm quantum dot-distributed feedback lasers directly grown on (001) Si[J]. Laser & Photonics Reviews, 14, 2000037(2020).

[102] Liu S T, Wu X R, Jung D et al. High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity[J]. Optica, 6, 128-134(2019).

[103] Chen J J, Wei W Q, Qin J L et al. Multi-wavelength injection locked semiconductor comb laser[J]. Photonics Research, 10, 1840-1847(2022).

[104] Han Y, Ng W K, Xue Y et al. Room temperature Ⅲ‒Ⅴ nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators[J]. Photonics Research, 7, 1081-1086(2019).

[105] Han Y, Yan Z, Ng W K et al. Bufferless 1.5 µm Ⅲ‒Ⅴ lasers grown on Si-photonics 220 nm silicon-on-insulator platforms[J]. Optica, 7, 148-153(2020).

[106] Zhang B, Wei W Q, Wang J H et al. 1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy[J]. Optics Express, 27, 19348-19358(2019).

[107] Wei W Q, Feng Q, Guo J J et al. InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration[J]. Optics Express, 28, 26555-26563(2020).

[108] Huang J Z, Wei W Q, Chen J J et al. P-doped 1300 nm InAs/GaAs quantum dot lasers directly grown on an SOI substrate[J]. Optics Letters, 46, 5525-5528(2021).

[109] Huang J Z, Wei W Q, Yang B et al. Monolithic quantum dot discrete mode laser on SOI[J]. ACS Photonics, 10, 1813-1820(2023).

[110] Wang Y, Chen S M, Yu Y et al. Monolithic quantum-dot distributed feedback laser array on silicon[J]. Optica, 5, 528-533(2018).

[111] Shang C, Hughes E, Wan Y T et al. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters[J]. Optica, 8, 749-754(2021).

[112] Luo W, Lin L Y, Huang J et al. Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm[J]. Optics Express, 30, 40750-40755(2022).

[113] Lv Z R, Wang S, Wang S L et al. Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 ℃[J]. Optics Express, 31, 24173-24182(2023).

[114] Wang Y L, Ma B J, Li J et al. InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers[J]. Optics Express, 31, 4862-4872(2023).

[115] Yang B, Han D, Wei W Q et al. Quantum dot distributed feedback laser grown on silicon with laterally coupled gratings[J]. Journal of Physics D, 58, 135116(2025).

[116] Park H, Lee S, Han W S et al. High performance 1.3 µm Ⅲ‒Ⅴ quantum dot lasers grown on silicon via all MOCVD epitaxy[J]. Laser & Photonics Reviews, e00574(2025).

[117] Shang C, Feng K Y, Hughes E T et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers[J]. Light: Science & Applications, 11, 299(2022).

[118] Wei W Q, He A, Yang B et al. Monolithic integration of embedded Ⅲ‒Ⅴ lasers on SOI[J]. Light: Science & Applications, 12, 84(2023).

[119] Remis A, Monge-Bartolome L, Paparella M et al. Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides[J]. Light: Science & Applications, 12, 150(2023).

[120] Han Y, Xue Y, Lau K M. Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator[J]. Applied Physics Letters, 114, 192105(2019).

[121] Yan Z, Han Y, Lin L Y et al. A monolithic InP/SOI platform for integrated photonics[J]. Light: Science & Applications, 10, 200(2021).

[122] Xue Y, Li J, Wang Y et al. In-plane 1.5 µm distributed feedback lasers selectively grown on (001) SOI[J]. Laser & Photonics Reviews, 18, 2300549(2024).

[123] Xue Y, Han Y, Wang Y et al. High-speed and low dark current silicon-waveguide-coupled Ⅲ‒Ⅴ photodetectors selectively grown on SOI[J]. Optica, 9, 1219-1226(2022).

[124] Wang R J, Han Y, Yu S Y. On-chip semiconductor lasers for silicon photonics (invited)[J]. Acta Optica Sinica, 44, 1513010(2024).