Journal of Semiconductors, Volume. 45, Issue 7, 072701(2024)

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Xiaoshan Du1,2、†, Shu Wang2、†, Qiaoxuan Zhang3、†, Shengyao Chen2,4、†, Fengyou Yang2, Zhenzhou Liu2, Zhengwei Fan2, Lijun Ma2, Lei Wang5, Lena Du6, Zhongchang Wang7, Cong Wang8、*, Bing Chen1、**, and Qian Liu2,4、***
Author Affiliations
  • 1College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
  • 2National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Hebei University of Water Resources and Electric Engineering Electrical Automation Department, Cangzhou 061001, China
  • 4The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, China
  • 5College of Mathematics and Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology, Qingdao 266061, China
  • 6Department of Physics, Capital Normal University, Beijing 100048, China
  • 7Department of Advanced Materials and Computing, International Iberian Nanotechnology Laboratory (INL), 4715-330 Braga, Portugal
  • 8College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
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    Xiaoshan Du, Shu Wang, Qiaoxuan Zhang, Shengyao Chen, Fengyou Yang, Zhenzhou Liu, Zhengwei Fan, Lijun Ma, Lei Wang, Lena Du, Zhongchang Wang, Cong Wang, Bing Chen, Qian Liu. Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials[J]. Journal of Semiconductors, 2024, 45(7): 072701

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    Paper Information

    Category: Articles

    Received: Jan. 25, 2024

    Accepted: --

    Published Online: Jul. 18, 2024

    The Author Email: Cong Wang (CWang), Bing Chen (BChen), Qian Liu (QLiu)

    DOI:10.1088/1674-4926/24010036

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