Fig. 1. (Color online) (a) Schematic diagram of the pristine MoS₂ memristor. (b) Schematic diagram of the laser-scanned half-area MoS₂ memristor. (c) HRS and LRS retention time test results. (d) Electrical performance test of the pristine MoS₂ memristor. (e) Electrical performance test of the laser-scanned half-area MoS₂ memristor. (f) Comparison of experimental data and simulation results of the set process.

Fig. 2. (Color online) (a) AES analysis of pristine and laser-modulated MoS₂ with different laser grayscale values. (b) The memristive property of different grayscales modulated MoS₂ devices. (c) MoS₂ device after half-sided laser doped. (d) Conductive filament consists of vacancy formed after applying positive voltage (2 V) on the device, where the system performs a LRS. (e) Schematic calculation for the low doping case. (f) Conductive filament consists of vacancy that is broken after reversing the applied voltage, where system performs a HRS.

Fig. 3. (Color online) Schematic representation of the atomic structure, local density of states and their energy bands of MoS₂ with different oxygen doping levels. (a)−(c) Depict the atomic structure, local density of states and their energy band structures of pristine MoS₂. (d)−(f) Represent the atomic structure, local density of states and their energy band structures of MoS₂ with one S vacancy and one oxygen substitution on the right half plane. (g)−(i) Represent the atomic structure, local density of states and their energy band structures of MoS₂ with two sulfur vacancies and two oxygen substitutions on the right half plane. (j)−(l) Correspond the atomic structure, local density of states and their energy band structures of fully doped MoS₂.

Fig. 4. (Color online) Optical microscopy imaging of samples after grey-scale scanning (a) MoS₂, (b) HfS₂, (c) WS₂ and the corresponding PL spectra of the samples (d) MoS₂, (e) HfS₂, (f) WS₂.