High-performance Ag<sub>2</sub>BiI<sub>5</sub> Pb-free perovskite photodetector

Fig. 1. Characteristics of Ag2BiI5 films with different precursor concentrations: (a) Ag2BiI5 electronic structure diagram; (b)–(f) SEM morphologies of Ag2BiI5 films prepared by 0.2–0.6 M precursor concentrations; (g)–(i) XPS high-resolution spectra of the perovskite surface analysis.

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Fig. 2. (a) XRD patterns; (b) absorption spectrum curves; (c) TRPL curves.

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Fig. 3. (a) Device structure diagram. (b) Cross-sectional SEM image of a PD. (c) Light/dark current statistics of PDs at various concentrations. (d) Switching ratio of PDs at various concentrations.

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Fig. 4. (a) Light/dark current statistics of PDs at various rotating speeds. (b) Switching ratio of PDs at various rotating speeds. (c) Light/dark current statistics of PDs with different ratios of AgI and BiI3. (d) Switching ratio of PDs with different ratios of AgI and BiI3.

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Fig. 5. Performances of Ag2BiI5 perovskite PDs. (a) I-V curve; (b) I-t curves of PDs under different light intensities; (c) I-t curve at weak-light intensity; (d) current versus optical power curve of the PD, showing that the LDR of the device is 138 dB; (e) R and D* curves of a PD; (f) response time of a PD.

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Fig. 6. Stability of unencapsulated PDs. (a) I-t curves of PDs under long-time illumination; (b) thermal and storage stability characteristics; (c) XRD patterns of PDs.

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Table 1. Preparation Method and Device Performance of Metal Halide Perovskite Photodetectors

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Table 1. Preparation Method and Device Performance of Metal Halide Perovskite Photodetectors

Photodetector	Preparation Method	Responsivity [ $A W^{- 1}]$	Detectivity [Jones]	Response Speed	Refs.
$Graphene / {MoS}_{2} / {(PEA)}_{2} {SnI}_{4} /$ graphene	Mechanical exfoliating	0.121	$8.09 \times 10^{9}$	34 ms	[28]
${TiO}_{2} / {CsSnI}_{3} / P_{3} HT$	Spin-coating	0.257	$1.5 \times 10^{11}$	0.35/1.6 ms	[29]
${Cs}_{3} {Cu}_{2} I_{5} / Si$	Spin-coating	0.13	$3.1 \times 10^{10}$	92.5/189.2 μs	[30]
${MA}_{3} {Bi}_{2} I_{9}$	Spin-coating	$1.76 \times 10^{- 3}$	$1.3 \times 10^{12}$	26.81/41.89 ms	[31]
${Cs}_{2} {AgBiBr}_{6} / {SnO}_{2}$	Low-pressure assisted method	0.11	$2.4 \times 10^{10}$	3 ms	[32]
${Cs}_{2} {AgBiBr}_{6}$	Top-seeded solution growth	$9.2 \times 10^{- 4}$	$2.62 \times 10^{9}$	75/38 ms	[33]
$FTO / {Ga}^{3 +}$ -doped ZnO NR/ ${MAPbI}_{3} / {MoO}_{3} / Au$	Two-step deposition	0.3	$1.3 \times 10^{12}$	$< 2 / < 2 ms$	[34]
$FTO / ZnO / MgO / {MAPbI}_{3} / C$	Spin-coating and immersion	$5.9 \times 10^{- 2}$	$1.5 \times 10^{12}$	0.63/1.6 ms	[35]
$ITO / CdS / {MAPbI}_{3} / Au$	Spin-coating	0.43	$2.3 \times 10^{11}$	3.2/9.6 ms	[36]
${CsPbCl}_{3}$ SCs	–	0.268	$1.59 \times 10^{10}$	28.4/2.7 ms	[37]
${CsPbBr}_{3}$ MCs	Inverse temperature crystallization	0.172	$4.8 \times 10^{12}$	0.14/0.12 ms	[38]
$F T O / S n O_{2} / {Ag}_{2} {BiI}_{5} / C$	Spin-coating	0.3	$5.3 \times 1 0^{12}$	0.34/0.26 ms	Our work

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Zihao Shuang, Hai Zhou, Dingjun Wu, Xuhui Zhang, Boao Xiao, Jinxia Duan, Hao Wang, "High-performance Ag₂BiI₅ Pb-free perovskite photodetector," Photonics Res. 10, 1886 (2022)

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Paper Information

Category: Optoelectronics

Received: Mar. 15, 2022

Accepted: Jun. 9, 2022

Published Online: Jul. 27, 2022

The Author Email: Hai Zhou (hizhou@dgut.edu.cn), Hao Wang (wangh@hubu.edu.cn)

DOI:10.1364/PRJ.452883

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology