Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 6, 703(2022)

Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser

Cui-fen CHEN1, Tie-min ZHANG1, Zi-lin WANG1, Lian-cong GAO1, Chang SU1, Ke WANG1, An-chen WANG2, Zhong-mei HUANG2, Wei-qi HUANG1,2、*, and Hong-yan PENG1、**
Author Affiliations
  • 1College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China
  • 2College of Materials and Metallurgy,Guizhou University,Guiyang 550025,China
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    References(19)

    [17] HUANG W Q, JIN F, WANG H X et al. Stimulated emission in oxide structure of silicon formed by irradiation of laser[J]. Guizhou Science, 26, 1-5(2008).

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    Cui-fen CHEN, Tie-min ZHANG, Zi-lin WANG, Lian-cong GAO, Chang SU, Ke WANG, An-chen WANG, Zhong-mei HUANG, Wei-qi HUANG, Hong-yan PENG. Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(6): 703

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    Paper Information

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    Received: Mar. 9, 2022

    Accepted: --

    Published Online: Jun. 22, 2022

    The Author Email: Wei-qi HUANG (wqhuang@hainnu.edu.cn), Hong-yan PENG (mdjphy@163.com)

    DOI:10.37188/CJLCD.2022-0078

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