Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 6, 703(2022)

Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser

Cui-fen CHEN1, Tie-min ZHANG1, Zi-lin WANG1, Lian-cong GAO1, Chang SU1, Ke WANG1, An-chen WANG2, Zhong-mei HUANG2, Wei-qi HUANG1,2、*, and Hong-yan PENG1、**
Author Affiliations
  • 1College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China
  • 2College of Materials and Metallurgy,Guizhou University,Guiyang 550025,China
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    Figures & Tables(4)
    SEM images of the cavity after annealing for 10 min
    Annealing time effect of cavity sample
    Spatial effect of PL emission measured after annealing for 20 min at room temperature
    Comparison for PL external quantum efficiency among various cavity samples with different annealing time under different excitation power
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    Cui-fen CHEN, Tie-min ZHANG, Zi-lin WANG, Lian-cong GAO, Chang SU, Ke WANG, An-chen WANG, Zhong-mei HUANG, Wei-qi HUANG, Hong-yan PENG. Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(6): 703

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    Paper Information

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    Received: Mar. 9, 2022

    Accepted: --

    Published Online: Jun. 22, 2022

    The Author Email: Wei-qi HUANG (wqhuang@hainnu.edu.cn), Hong-yan PENG (mdjphy@163.com)

    DOI:10.37188/CJLCD.2022-0078

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