Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 10, 1310(2022)

Flexible HfO2/Ta2O5 stacking gate dielectric ZnO thin film transistor

Wei-tao HU1, Fan YANG1,2, Xiao-tian YANG2,3、*, Chao WANG1,2, Yan-jie WANG1,2, and Ming-yang SUN1
Author Affiliations
  • 1Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving,School of Electrical and Computer Science,Jilin Jianzhu University,Changchun 130118,China
  • 2Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education,Jilin Jianzhu University,Changchun 130118,China
  • 3Jilin Normal University,Siping 136099,China
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    References(24)

    [18] WANG W. Research on fabrication and properties of AZO thin-film transistors on flexible substrates[D](2013).

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    Wei-tao HU, Fan YANG, Xiao-tian YANG, Chao WANG, Yan-jie WANG, Ming-yang SUN. Flexible HfO2/Ta2O5 stacking gate dielectric ZnO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(10): 1310

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    Paper Information

    Category: Research Articles

    Received: Apr. 14, 2022

    Accepted: --

    Published Online: Oct. 10, 2022

    The Author Email: Xiao-tian YANG (hanyxt@163.com)

    DOI:10.37188/CJLCD.2022-0125

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