Flexible HfO2/Ta2O5 stacking gate dielectric ZnO thin film transistor

Wei-tao HU; Fan YANG; Xiao-tian YANG; Chao WANG; Yan-jie WANG; Ming-yang SUN

doi:10.37188/CJLCD.2022-0125

Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 10, 1310(2022)

Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor

Wei-tao HU¹, Fan YANG^1,2, Xiao-tian YANG^2,3、*, Chao WANG^1,2, Yan-jie WANG^1,2, and Ming-yang SUN¹

¹Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving，School of Electrical and Computer Science，Jilin Jianzhu University，Changchun 130118，China

²Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education，Jilin Jianzhu University，Changchun 130118，China

³Jilin Normal University，Siping 136099，China

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Fig. 1. Schematic diagram of TFT device structure

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Fig. 2. Transfer characteristic curves of thin film transistors with $T a_{2} O_{5}$ sputtering time of 30，60，90 min，respectively.

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Fig. 3. $T a_{2} O_{5}$ AFM images of different sputtering times.（a）30 min；（b）60 min；（c）90 min.

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Fig. 4. Transfer characteristic curves of thin film transistors with $T a_{2} O_{5}$ oxygen-argon ratios of 20∶80，10∶90and 0∶100，respectively.

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Fig. 5. XRD spectra of $T a_{2} O_{5}$ oxygen-argon ratios of 20∶80，10∶90 and 0∶100，respectively.

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Fig. 6. SEM images of $T a_{2} O_{5}$ thin films with different oxygen-argon ratios.（a）0∶100；（b）10∶90；（c）20∶80.

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Fig. 7. Transfer characteristic curves of $T a_{2} O_{5}$ single-layer gate dielectric and $H_{f} O_{2}$ / $T a_{2} O_{5}$ stacking gate dielectric thin film transistors

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Fig. 8. Cross-sectional SEM images of single gate dielectric layer（a），stacking gate dielectric layer and active layer（b）.

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Table 1. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different sputtering duration
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Table 1. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different sputtering duration
溅射时长/min $H_{f} O_{2}$ / $T a_{2} O_{5}$ 厚度/nm $V_{t h}$ /V $I_{o n}$ / $I_{o f f}$ SS/（V· $d e c a d e^{- 1}$ ） μ_sat/（cm²·V^-1·s^-1）
30 80/200 2.8 3.14 $\times 10^{4}$ 1.33 3.94
60 80/400 9.1 1.27× $10^{6}$ 0.54 7.03
90 80/600 4.0 1.2× $10^{5}$ 0.77 0.53

Table 2. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different oxygen-argon ratios
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Table 2. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different oxygen-argon ratios
$T a_{2} O_{5}$ 层氧氩比 $V_{t h}$ /V $I_{o n}$ / $I_{o f f}$ SS/（V· $d e c a d e^{- 1}$ ） μ_sat/（cm²·V^-1·s^-1）
0∶100 3.9 1.43 $\times 10^{5}$ 0.98 4.00
10∶90 9.1 1.27× $10^{6}$ 0.54 7.03
20∶80 10.1 1.25× $10^{5}$ 1.14 8.90

Table 3. Characterization performance of $T a_{2} O_{5}$ with different oxygen-argon ratios.
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Table 3. Characterization performance of $T a_{2} O_{5}$ with different oxygen-argon ratios.
$T a_{2} O_{5}$ 层氧氩比平均晶粒尺寸/nm 均方根粗糙度/nm 厚度/nm
0∶100 11.81 1.22 580
10∶90 11.35 1.15 430
20∶80 9.86 0.95 360

Table 4. Electrical parameters of TFT with $T a_{2} O_{5}$ single-layer gate dielectric and $H_{f} O_{2}$ / $T a_{2} O_{5}$ stacking gate dielectric
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Table 4. Electrical parameters of TFT with $T a_{2} O_{5}$ single-layer gate dielectric and $H_{f} O_{2}$ / $T a_{2} O_{5}$ stacking gate dielectric
栅介质层结构 $V_{t h}$ /V $I_{o n}$ / $I_{o f f}$ SS/（V· $d e c a d e^{- 1}$ ） μ_sat/（cm²·V^-1·s^-1）
H_fO₂/Ta₂O₅ 9.1 1.27 $\times 10^{6}$ 0.54 7.03
$T a_{2} O_{5}$ -2.1 6.33× $10^{2}$ 1.06 12.75

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Wei-tao HU, Fan YANG, Xiao-tian YANG, Chao WANG, Yan-jie WANG, Ming-yang SUN. Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(10): 1310

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Paper Information

Category: Research Articles

Received: Apr. 14, 2022

Accepted: --

Published Online: Oct. 10, 2022

The Author Email: Xiao-tian YANG (hanyxt@163.com)

DOI:10.37188/CJLCD.2022-0125

Topics

Table 1. Electrical performance of Ta2O5 stacking gate dielectric TFT with different sputtering duration

Table 1. Electrical performance of Ta2O5 stacking gate dielectric TFT with different sputtering duration

Table 2. Electrical performance of Ta2O5 stacking gate dielectric TFT with different oxygen-argon ratios

Table 2. Electrical performance of Ta2O5 stacking gate dielectric TFT with different oxygen-argon ratios

Table 3. Characterization performance of Ta2O5with different oxygen-argon ratios.

Table 3. Characterization performance of Ta2O5with different oxygen-argon ratios.

Table 4. Electrical parameters of TFT with Ta2O5 single-layer gate dielectric and HfO2/Ta2O5 stacking gate dielectric

Table 4. Electrical parameters of TFT with Ta2O5 single-layer gate dielectric and HfO2/Ta2O5 stacking gate dielectric

Table 1. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different sputtering duration

Table 1. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different sputtering duration

Table 2. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different oxygen-argon ratios

Table 2. Electrical performance of $T a_{2} O_{5}$ stacking gate dielectric TFT with different oxygen-argon ratios

Table 3. Characterization performance of $T a_{2} O_{5}$ with different oxygen-argon ratios.

Table 3. Characterization performance of $T a_{2} O_{5}$ with different oxygen-argon ratios.

Table 4. Electrical parameters of TFT with $T a_{2} O_{5}$ single-layer gate dielectric and $H_{f} O_{2}$ / $T a_{2} O_{5}$ stacking gate dielectric

Table 4. Electrical parameters of TFT with $T a_{2} O_{5}$ single-layer gate dielectric and $H_{f} O_{2}$ / $T a_{2} O_{5}$ stacking gate dielectric