Silicon carbide (SiC) is an ideal electronic material for high temperature, high frequency， and high power electronic devices. In last 20 years, with the continous development of epitaxial equipment and process, the film growth rate and quality of SiC have been significantly improved, which leads more and more applications in various industrial fields such as new energy vehicles, photovoltaic industry, high-voltage transmission industry and intelligent power stations. Different from the silicon semiconductor industry, silicon carbide devices must be processed on the epitaxial film. Therefore, silicon carbide epitaxial equipment plays an critical connecting role in the whole industrial chain, and it is also the most complex and difficult to develop equipment in the whole industrial chain. In this paper, the SiC pitaxial mechanism is briefly described. The progress of several important aspects of the SiC-chemical vapor deposition (CVD) equipment, such as reactor chamber, heating system and rotation system etc. are reviewed. The outlook for the future research key areas and direction of SiC is also given.