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Photonics Research, Volume. 12, Issue 9, 1858(2024)

Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging On the Cover

Yuanyuan Yue1, Yang Chen2,4、*, Jianhua Jiang1, Lin Yao1, Haiyu Wang3, Shanli Zhang2, Yuping Jia2, Ke Jiang2, Xiaojuan Sun2,5、*, and Dabing Li2,6、*
Author Affiliations
  • 1School of Management Science and Information Engineering, Jilin University of Finance and Economics, Changchun 130117, China
  • 2Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 3State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 4e-mail: cheny@ciomp.ac.cn
  • 5e-mail: sunxj@ciomp.ac.cn
  • 6e-mail: lidb@ciomp.ac.cn
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    [1] D. Li, K. Jiang, X. Sun. AlGaN photonics: recent advances in materials and ultraviolet devices. Adv. Opt. Photon., 10, 43-110(2018).

    [2] R. Yu, G. Liu, G. Wang. Ultrawide-bandgap semiconductor AlN crystals: growth and applications. J. Mater. Chem. C, 9, 1852-1873(2021).

    [3] S. Kargarrazi, A. S. Yalamarthy, P. F. Satterthwaite. Stable operation of AlGaN/GaN HEMTs for 25 h at 400°C in air. J. Electron Dev. Soc., 7, 931-935(2019).

    [4] S. Jha, E. V. Jelenković, M. M. Pejović. Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays. Microelectron. Eng., 86, 37-40(2009).

    [5] H. H. Nersisyan, J. H. Lee, H. Y. Kim. Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling. Int. Mater. Rev., 65, 323-355(2020).

    [6] Y. Chen, X. Zhou, Z. Zhang. Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices. Mater. Lett., 291, 129583(2021).

    [7] Y. Gu, J. Guo, B. Ye. Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure. Appl. Phys. Lett., 123, 232103(2023).

    [8] H. Wang, M. Feng, Y. Zhong. Ultrahigh-responsivity ultraviolet photodetectors based on AlGaN/GaN double-channel high-electron-mobility transistors. ACS Photon., 11, 180-186(2024).

    [9] Q. Lyu, H. Jiang, K. M. Laua. High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si. Appl. Phys. Lett., 117, 071101(2020).

    [10] W. Wu, C. Liu, L. Han. Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT. Appl. Surf. Sci., 618, 156618(2023).

    [11] Y. Zhong, E. Berikaa, J. Lu. Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature. AIP Adv., 10, 025022(2020).

    [12] C. Wang, H. Zhu, S. Wang. Effect of uniaxial tensile strains at different orientations on the characteristics of AlGaN/GaN high-electron-mobility transistors. IEEE Trans. Electron. Dev., 67, 449-454(2020).

    [13] Y. Xie, P. Wan, M. Jiang. Performance enhancement of a self-biased n-ZnO microwire/p-GaN heterojunction ultraviolet photodetector incorporating Ag nanowires. CrystEngComm, 24, 7727-7738(2022).

    [14] J. Li, X. Xi, X. Li. Ultra-high and fast ultraviolet response photodetectors based on lateral porous GaN/Ag nanowires composite nanostructure. Adv. Opt. Mater., 8, 1902162(2020).

    [15] C. H. Chen, S. J. Chang, Y. K. Su. GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts. IEEE Photon. Technol. Lett., 13, 848-850(2001).

    [16] Y.-Z. Chiou, J.-J. Tang. GaN photodetectors with transparent indium tin oxide electrodes. Jpn. J. Appl. Phys., 43, 4146-4149(2004).

    [17] T. K. Ko, S. J. Chang, J. K. Sheu. AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers. Semicond. Sci. Technol., 21, 1064-1068(2006).

    [18] Y. Chen, Y. Wu, J. Ben. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. J. Alloys Compd., 868, 159281(2021).

    [19] H. Parimoo, Q. Zhang, M. Vafadar. AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode. Appl. Phys. Lett., 120, 171108(2022).

    [20] S. Zhang, A. Hu, Q. Liu. Bipolar photoresponse in graphene/GaN heterostructure and its secure function in free-space optical communication. Adv. Electron. Mater., 9, 2300243(2023).

    [21] C. Mayousse, C. Celle, A. Fraczkiewicz. Stability of silver nanowire based electrodes under environmental and electrical stresses. Nanoscale, 7, 2107-2115(2015).

    [22] L. Xu, Y. Yang, Z.-W. Hu. Comparison study on the stability of copper nanowires and their oxidation kinetics in gas and liquid. ACS Nano, 10, 3823-3834(2016).

    [23] N. Biyikli, I. Kimukin, B. Butun. ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum. IEEE J. Sel. Top. Quantum Electron., 10, 759-765(2004).

    [24] M. I. Fadlalla, P. S. Kumar, V. Selvam. Emerging energy and environmental application of graphene and their composites: a review. J. Mater. Sci., 55, 7156-7183(2020).

    [25] A.-Q. Hu, Q.-L. Liu, X. Guo. Carrier localization enhanced high responsivity in graphene/semiconductor photodetectors. Chip, 1, 100006(2022).

    [26] B. Pandit, E. F. Schubert, J. Cho. Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure. Sci. Rep., 10, 22059(2020).

    [27] Y. Chen, K. Jiang, H. Zang. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. Carbon, 175, 155-163(2021).

    [28] H. Tian, Q. Liu, A. Hu. Hybrid graphene/GaN ultraviolet phototransistors with high responsivity and speed. Opt. Express, 26, 5408-5415(2018).

    [29] S. Wang, R. Chen, Y. Ren. Highly-rectifying graphene/GaN Schottky contact for self-powered UV photodetector. IEEE Photon. Technol. Lett., 33, 213-216(2021).

    [30] B. Pandit, H.-S. Jang, Y. Jeong. Highly sensitive ultraviolet photodetector based on an AlGaN/GaN HEMT with graphene-on-p-GaN mesa structure. Adv. Mater. Interfaces, 10, 2202379(2023).

    [31] T. Hu, L. Zhao, Y. Wang. High-sensitivity and fast-speed UV photodetectors based on asymmetric nanoporous-GaN/graphene vertical junction. ACS Nano, 17, 8411-8419(2023).

    [32] M. Kumar, H. Jeong, K. Polat. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector. J. Phys. D, 49, 275105(2016).

    [33] S.-C. Wu, M.-J. Wu, Y.-F. Chen. Nanolayered graphene/hexagonal boron nitride/n-AlGaN heterostructures as solar-blind deep-ultraviolet photodetectors. ACS Appl. Nano Mater., 3, 7595-7603(2020).

    [34] J. Li, X. Xi, S. Lin. Ultrahigh sensitivity graphene/nanoporous GaN ultraviolet photodetectors. ACS Appl. Mater. Interfaces, 12, 11965-11971(2020).

    [35] Y. Chen, N. Zhang, Y.-F. Li. Microscale-patterned graphene electrodes for organic light-emitting devices by a simple patterning strategy. Adv. Opt. Mater., 6, 1701348(2018).

    [36] S. F. Chichibu, A. Shikanai, T. Deguchi. Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells. Jpn. J. Appl. Phys., 39, 2417-2424(2000).

    [37] R. Chierchia, T. Böttcher, H. Heinke. Microstructure of heteroepitaxial GaN revealed by X-ray diffraction. J. Appl. Phys., 93, 8918-8925(2023).

    [38] C. Fan, X. Sun, Z. Shi. Wafer-scale fabrication of graphene-based plasmonic photodetector with polarization-sensitive, broadband, and enhanced response. Adv. Opt. Mater., 11, 2202860(2023).

    [39] C. Biswas, F. Güuneş, D. D. Loc. Negative and positive persistent photoconductance in graphene. Nano Lett., 11, 4682-4687(2011).

    [40] A. Hu, H. Tian, Q. Liu. Graphene on self-assembled InGaN quantum dots enabling ultrahighly sensitive photodetectors. Adv. Opt. Mater., 7, 1801792(2019).

    [41] J. Guo, X. Yuan, H. Ruan. A flexible PI/graphene heterojunction optoelectronic device modulated by TENG and UV light for neuromorphic vision system. Nano Energy, 117, 108928(2023).

    [42] J. Zhang, P. Guo, Z. Guo. Retina-inspired artificial synapses with ultraviolet to near-infrared broadband responses for energy-efficient neuromorphic visual systems. Adv. Funct. Mater., 33, 2302885(2023).

    [43] Y. Chen, Z. Shi, B. Lv. In situ growth of wafer-scale patterned graphene and fabrication of optoelectronic artificial synaptic device array based on graphene/n-AlGaN heterojunction for visual learning. Small, 20, 2401150(2024).

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    Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, Dabing Li, "Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging," Photonics Res. 12, 1858 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Mar. 28, 2024

    Accepted: Jun. 17, 2024

    Published Online: Aug. 12, 2024

    The Author Email: Yang Chen (cheny@ciomp.ac.cn), Xiaojuan Sun (sunxj@ciomp.ac.cn), Dabing Li (lidb@ciomp.ac.cn)

    DOI:10.1364/PRJ.524978

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology