Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging

Yuanyuan Yue; Yang Chen; Jianhua Jiang; Lin Yao; Haiyu Wang; Shanli Zhang; Yuping Jia; Ke Jiang; Xiaojuan Sun; Dabing Li

doi:10.1364/PRJ.524978

Photonics Research, Volume. 12, Issue 9, 1858(2024)

Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging On the Cover

Yuanyuan Yue¹, Yang Chen^2,4、*, Jianhua Jiang¹, Lin Yao¹, Haiyu Wang³, Shanli Zhang², Yuping Jia², Ke Jiang², Xiaojuan Sun^2,5、*, and Dabing Li^2,6、*

Author Affiliations

¹School of Management Science and Information Engineering, Jilin University of Finance and Economics, Changchun 130117, China

²Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

³State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

⁴e-mail: cheny@ciomp.ac.cn

⁵e-mail: sunxj@ciomp.ac.cn

⁶e-mail: lidb@ciomp.ac.cn

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Fig. 1. Schematic diagrams and locally enlarged optical microscope images of as-fabricated photodetector structures with (a) Gr-only, (b) lateral Gr-AlGaN, and (c) vertical Gr-AlGaN junctions. The cross-sectional device configuration of the corresponding photodetector is shown in the top-right. (d)–(f) Raman mapping for E2 band intensity of AlGaN (at the top) and 2D band intensity of graphene (at the bottom), in which the measured region is marked by red dashed line in (a)–(c).

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Fig. 2. (a) Raman spectra of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN junctions for these designed photodetectors, which are extracted from their Raman mapping. (b) PL spectrum and (c) XRD rocking curve scanning of the AlGaN epilayer.

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Fig. 3. (a)–(c) Logarithmic I–V curves of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN photodetectors working in dark (black line) and light (red line) conditions; the photocurrent is plotted as green lines. (d)–(f) I–V–T curves and (g)–(i) schematic diagrams of photocarrier transport behavior for these devices in (a)–(c).

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Fig. 4. (a) Spectral response and (b) dependence of responsivity and detectivity on light power density for lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors.

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Fig. 5. (a) Schematic diagram of the imaging test and (b) distribution of light and dark states for the 3×3 photodetector array. (c) External circuit connection for the vertical Gr-AlGaN and lateral Gr-AlGaN photodetectors. (d) Real imaging by the vertical Gr-AlGaN photodetector array at zero bias and (e) dependence on the light illumination time by the lateral Gr-AlGaN photodetector array at the bias voltage of 2 V.

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Fig. 6. (a) Optical microscope images of the entire lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors. (b) Schematic plan-view of paired metal electrodes.

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Fig. 7. Energy band diagram of the Gr-AlGaN junction under the light illumination.

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Fig. 8. (a) Power density-dependent I–V–T curves of lateral Gr-AlGaN and (b) vertical Gr-AlGaN photodetectors, working at a bias voltage of 2 V and 0 V, respectively.

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Fig. 9. I–V–T curves of the lateral Gr-AlGaN photodetector (at zero bias) and vertical Gr-AlGaN photodetector (at 2 V).

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Table 1. Comparison of Photodetector Performance for Those Based on Gr-(Al)GaN Junctions

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Table 1. Comparison of Photodetector Performance for Those Based on Gr-(Al)GaN Junctions

Photodetector	Light Source	Power ( $μW / {cm}^{2}$ )	Bias (V)	$τ_{r} / τ_{f} (s)$	$R$ (A/W)	$D^{*}$ (Jones)	Ref.
Lateral Gr-GaN NPs	266 nm laser	$6.4 \times 10^{4}$	5	0.122/0.186	$\sim 2 \times 10^{2}$	—	[18]
Lateral Gr-UID GaN	261 nm laser	0.45	1	5/5.3	$1.11 \times 10^{2}$	$\sim 9.79 \times 10^{8}$	[20]
Lateral $Gr - {SiO}_{2} - AlGaN - GaN$	310 nm light	—	4	—/—	4.5	$6.19 \times 10^{11}$	[26]
Vertical Gr-n-GaN	280 nm LED	$(2.05 - 12.27) \times 10^{3}$	0	$2.21 \times 10^{- 4} / 5.46 \times 10^{- 4}$	$10^{- 5}$	—	[29]
Vertical Gr-p-GaN-AlGaN-GaN	360 nm light	$1.96 \times 10^{3}$	−20	$\sim 0.18$ /—	20.9	$1.91 \times 10^{14}$	[30]
Vertical Gr-nanoporous GaN	365 nm LED	0.77	−4	$1.22 \times 10^{- 5} / 1.46 \times 10^{- 5}$	$1.01 \times 10^{4}$	$7.84 \times 10^{14}$	[31]
Vertical Gr-h-BN-n-AlGaN	280 nm light	16.1	5	1.42/0.13	3.63	$1.76 \times 10^{12}$	[33]
Lateral Gr-AlGaN	Xenon lamp	78.9	2	3.54/1.31	$1.27 \times 10^{4}$	$3.88 \times 10^{12}$	This work
Vertical Gr-AlGaN	Xenon lamp	78.9	0	0.07/0.2	$2.61 \times 10^{- 2}$	$1.34 \times 10^{11}$	This work

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Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, Dabing Li, "Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging," Photonics Res. 12, 1858 (2024)

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Paper Information

Category: Optoelectronics

Received: Mar. 28, 2024

Accepted: Jun. 17, 2024

Published Online: Aug. 12, 2024

The Author Email: Yang Chen (cheny@ciomp.ac.cn), Xiaojuan Sun (sunxj@ciomp.ac.cn), Dabing Li (lidb@ciomp.ac.cn)

DOI:10.1364/PRJ.524978

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology