Chinese Journal of Lasers, Volume. 50, Issue 2, 0215001(2023)

High-Power Single-Mode 980 nm Semiconductor Laser Chip and Module for Erbium-Doped Fiber Amplifiers

Song Tang, Tong Zhang, Yongming Zhao, Wangyibo Chen, Yanchun Zhang, and Guowen Yang*
Author Affiliations
  • Dogain Laser Technology (Suzhou) Co. Ltd., Suzhou 215000, Jiangsu, China
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    References(8)

    [1] Zhang K W, Zhao W, Xie X P et al. Experimental research of high gain and low noise figure optical amplifier based on erbium-doped fiber[J]. Acta Optica Sinica, 33, 0506003(2013).

    [2] Liu B, Sun J Q. Gain enhancement of two-stage L-band EDFA pumped by C-band and 980 nm[J]. Chinese Journal of Lasers, 30, 917-920(2003).

    [3] Sverdlov B, Pfeiffer H U, Zibik E et al. Optimization of fiber coupling in ultra-high power pump modules at λ=980 nm[J]. Proceedings of SPIE, 8605, 860508(2013).

    [4] Yang G W, Smith G M, Davis M K et al. Highly reliable high-power 980-nm pump laser[J]. IEEE Photonics Technology Letters, 16, 2403-2405(2004).

    [5] Zheng X G, Li T, Lu P et al. Analysis of temperature characteristics of 980 nm semiconductor laser facet[J]. Chinese Journal of Lasers, 40, 1102004(2013).

    [6] Li H, Qu Y, Gao X et al. High performance 980 nm single mode semiconductor lasers[J]. Acta Armamentarii, 31, 1110-1113(2010).

    [7] Liu B, Liu Y Y. High power 980 nm ridge waveguide semiconductor laser diode[J]. Laser & Optoelectronics Progress, 52, 091404(2015).

    [8] Mohrdiek S, Pfeiffer H U, Zibik E A et al. Versatile 1 W narrow band 976 nm and 1064 nm light sources[J]. Proceedings of SPIE, 7953, 795310(2011).

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    Song Tang, Tong Zhang, Yongming Zhao, Wangyibo Chen, Yanchun Zhang, Guowen Yang. High-Power Single-Mode 980 nm Semiconductor Laser Chip and Module for Erbium-Doped Fiber Amplifiers[J]. Chinese Journal of Lasers, 2023, 50(2): 0215001

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    Paper Information

    Category: Letters

    Received: Sep. 28, 2022

    Accepted: Nov. 15, 2022

    Published Online: Jan. 9, 2023

    The Author Email: Yang Guowen (yanggw@dogain.com)

    DOI:10.3788/CJL221283

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