Chinese Journal of Lasers, Volume. 50, Issue 2, 0215001(2023)

High-Power Single-Mode 980 nm Semiconductor Laser Chip and Module for Erbium-Doped Fiber Amplifiers

Song Tang, Tong Zhang, Yongming Zhao, Wangyibo Chen, Yanchun Zhang, and Guowen Yang*
Author Affiliations
  • Dogain Laser Technology (Suzhou) Co. Ltd., Suzhou 215000, Jiangsu, China
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    Figures & Tables(6)
    Schematic of optical signal amplification in an EDFA
    Schematic of 980 nm single-mode semiconductor laser chip
    Typical characteristic curves of a 980 nm single-mode semiconductor laser chip. (a) Optical output power and power conversion efficiency versus current (inset: chips photo); (b) slow-axis far-field profile under different currents (inset: near-field profile at 1500 mW)
    Optical power-current curves of 980 nm single-mode semiconductor laser chip under high injection current
    Typical characteristic curves of 980 nm single-mode coupling module. (a) Optical output power and fiber coupling efficiency versus current (inset: module photo); (b) spectra under various output powers
    Long life-time test curve of 980 nm single-mode laser chip under current of 2 A and junction temperature of 137 ℃
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    Song Tang, Tong Zhang, Yongming Zhao, Wangyibo Chen, Yanchun Zhang, Guowen Yang. High-Power Single-Mode 980 nm Semiconductor Laser Chip and Module for Erbium-Doped Fiber Amplifiers[J]. Chinese Journal of Lasers, 2023, 50(2): 0215001

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    Paper Information

    Category: Letters

    Received: Sep. 28, 2022

    Accepted: Nov. 15, 2022

    Published Online: Jan. 9, 2023

    The Author Email: Yang Guowen (yanggw@dogain.com)

    DOI:10.3788/CJL221283

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