Journal of Semiconductors, Volume. 43, Issue 8, 082802(2022)
Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET
 J J Chen, X Jiang, Z J Li et al. Investigation on effects of thermal stress on SiC MOSFET degradation through power cycling tests. 2020 IEEE Applied Power Electronics Conference and Exposition, 1106(2020).
 H Bencherif, A Yousfi, L Dehimi et al. Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET. 2019 1st International Conference on Sustainable Renewable Energy Systems and Applications, 1(2019).
 S Wirths, A Mihaila, G Romano et al. Study of 1.2kV high-k SiC power MOSFETS under harsh repetitive switching conditions. 2021 33rd International Symposium on Power Semiconductor Devices and ICs, 107(2021).
 L X Tian, F Yang, X P Niu et al. Development and analysis of 6500V SiC power MOSFET. 2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors, 6(2021).
Copy Citation Text
Lixin Tian, Zechen Du, Rui Liu, Xiping Niu, Wenting Zhang, Yunlai An, Zhanwei Shen, Fei Yang, Xiaoguang Wei. Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET[J]. Journal of Semiconductors, 2022, 43(8): 082802
Set citation alerts for the article
Received: Mar. 8, 2022
Published Online: Aug. 23, 2022
The Author Email: Tian Lixin (email@example.com), Yang Fei (firstname.lastname@example.org)