Journal of Semiconductors, Volume. 43, Issue 8, 082802(2022)

Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Lixin Tian1、*, Zechen Du1, Rui Liu1, Xiping Niu1, Wenting Zhang1, Yunlai An1, Zhanwei Shen2, Fei Yang1、**, and Xiaoguang Wei1
Author Affiliations
  • 1State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China
  • 2Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Lixin Tian, Zechen Du, Rui Liu, Xiping Niu, Wenting Zhang, Yunlai An, Zhanwei Shen, Fei Yang, Xiaoguang Wei. Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET[J]. Journal of Semiconductors, 2022, 43(8): 082802

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    Paper Information

    Category: Articles

    Received: Mar. 8, 2022

    Accepted: --

    Published Online: Aug. 23, 2022

    The Author Email: Tian Lixin (tianlixin0526@163.com), Yang Fei (yangsenji@163.com)

    DOI:10.1088/1674-4926/43/8/082802

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