Journal of Semiconductors, Volume. 43, Issue 8, 082802(2022)

Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Lixin Tian1、*, Zechen Du1, Rui Liu1, Xiping Niu1, Wenting Zhang1, Yunlai An1, Zhanwei Shen2, Fei Yang1、**, and Xiaoguang Wei1
Author Affiliations
  • 1State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China
  • 2Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Figures & Tables(0)
    (Color online) Current density and blocking voltage variation with doping concentration and thickness of epitaxial layer.
    (Color online) Schematic cross-section of 6.5 kV SiC MOSFET.
    (Color online) 6.5 kV SiC MOSFET devices on the 6-inch wafer.
    (Color online) Comparison of output current of five chips on three wafers.
    (Color online) Comparison of output, transfer and derivative parameters of five cell structures. (a) Output characteristic curves. (b) Transfer characteristic curves. (c) Transconductance comparison of different channel lengths. (d) Cell transconductance comparison of different JFET widths.
    (Color online) Breakdown characteristics of test pattern gate oxide capacitors.
    (Color online) The transforming curves of the gate oxide capacitor I–V curves.
    (Color online) The relationship between barrier height and slope.
    (Color online) 6.5 kV SiC MOSFET package layout and outline.
    High temperature gate bias reliability. (a) Forward gate voltage test results. (b) Reverse gate voltage test results.
    The results of high temperature reverse bias reliability.
    • Table 0. Chip yield of 3 wafers.

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      Table 0. Chip yield of 3 wafers.

      #1#2#3
      C136.36%54.55%61.90%
      C236.36%54.55%57.14%
      C340.91%54.55%38.10%
      C431.82%50.00%42.86%
      C554.55%63.64%52.38%
    • Table 0. Cell parameter table.

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      Table 0. Cell parameter table.

      Cell numberChannel length (μm) Width of JFET region (μm)
      C10.754
      C21.254
      C314
      C413
      C515
    • Table 0. Epitaxial layer thickness and doping concentration.

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      Table 0. Epitaxial layer thickness and doping concentration.

      NumberThickness (μm) Doping (1015cm−3) t/( Ndqμ)
      #164.71.2934.1
      #262.31.1636.5
      #362.51.2234.8
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    Lixin Tian, Zechen Du, Rui Liu, Xiping Niu, Wenting Zhang, Yunlai An, Zhanwei Shen, Fei Yang, Xiaoguang Wei. Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET[J]. Journal of Semiconductors, 2022, 43(8): 082802

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    Paper Information

    Category: Articles

    Received: Mar. 8, 2022

    Accepted: --

    Published Online: Aug. 23, 2022

    The Author Email: Tian Lixin (tianlixin0526@163.com), Yang Fei (yangsenji@163.com)

    DOI:10.1088/1674-4926/43/8/082802

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