Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu; Jun Zheng; Chaoqun Niu; Taoran Liu; Qinxing Huang; Mingming Li; Diandian Zhang; Yaqing Pang; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.1364/PRJ.456000

Photonics Research, Volume. 10, Issue 7, 1567(2022)

Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu^1,2, Jun Zheng^1,2、*, Chaoqun Niu^1,2, Taoran Liu^1,2, Qinxing Huang^1,2, Mingming Li^1,2, Diandian Zhang^1,2, Yaqing Pang^1,2, Zhi Liu^1,2, Yuhua Zuo^1,2, and Buwen Cheng^1,2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(8)

Fig. 1. RSM around the asymmetric (−2 −2 4) reflection of (a) sample A; (b) sample B; (c) sample C; (d) sample D. The inset of (a) shows an schematic diagram of epitaxial structure of GeSn alloy. The inset of (c) shows an SEM image of sample C, and the positions marked by the red circle are the segregated Sn.

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Fig. 2. Raman scattering spectra of GeSn samples and a Ge wafer for reference, and the position of the ball corresponds to the calculated Ge-Ge Raman shift.

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Fig. 3. (a) Full view of XTEM image of sample D; inset: EDX Ge and Sn element mapping. (b) High-resolution XTEM image and FFT pattern of area “b” in (a). (c), (d) Inverse FFT images of the rectangular area in (b).

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Fig. 4. SIMS profile of Sn composition and bandgap calculations at different depths of (a) sample A; (b) sample B; (c) sample C; (d) sample D. Regions marked with different colors correspond to different strain states of the RSM in Fig. 1.

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Fig. 5. (a) Three-dimensional schematic of GeSn photodetector with interdigital electrode structure. The inset shows the top view of the device. (b) Working mechanism of GeSn photodetector under light incident conditions. (c) Dark I−V curves of GeSn photodetector at different temperatures. (d) Photocurrent spectra of the GeSn photodetector at 0.2 V for different temperatures.

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Fig. 6. (a) Wavelength-dependent optical responsivity of GeSn photodetector under a bias voltage of 1 V at 77 K. Inset: responsivity at 3 μm as a function of voltage at 77 K. (b) Comparison of cutoff wavelength of GeSn photodetectors in different works.

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Table 1. Summary of Growth Temperature (T_growth), Sn Crucible Temperature (T_Sn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samples^a

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Table 1. Summary of Growth Temperature (T_growth), Sn Crucible Temperature (T_Sn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samples^a

Samples	$T_{growth}$ (°C)	$T_{Sn}$ (°C)	$x$ (%)	RMS (nm)
A	170	760–820	2.2–8.6 (I)8.6–11.2 (II)	1.60
B	150	760–835	2.0–7.0 (I)7.0–8.9 (II) 8.9–14.2 (III)	0.90
C	150	760–850	2.0–7.3 (I) 7.3–8.7 (II) 8.7–20.3 (III)	1.32
D	150	760–835	2.0–7.1 (I) 7.1–8.7 (II) 8.7–16.3 (III)	2.04

Table 2. Summary of the Performance of GeSn Photodetectors^a

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Table 2. Summary of the Performance of GeSn Photodetectors^a

Reference	Sn Content	Structure	Epitaxial Technique	Peak Specific Detectivity ( $cm {Hz}^{1 / 2} W^{- 1}$ )	Responsivity (A/W)	Cutoff Wavelength (μm)
[16]	3%	PIN	MBE	–	0.12 at 1.64 μm at −1 V at RT	1.8 μm
[17]	9%	QW/PC	CVD	–	0.1 at 2.2 μm at 5 V at RT	2.4 μm
[18]	10%	PC	CVD	$\sim 4.6 \times 10^{9}$ at 77 K	1.63 at 1.55 μm at 50 V at 77 K	2.4 μm
[19]	10%	PIN	CVD	$2.4 \times 10^{9}$ at 77 K	0.19 at 1.55 μm at − 0.1 V at RT	2.6 μm
[20]	11%	PC	CVD	$2.0 \times 10^{10}$ at 77 K	28.5 at 1.55 μm at 2 V at 77 K	3.0 μm
[21]	20%	PC	CVD	$1.1 \times 10^{8}$ at 77 K	0.8 at 2.0 μm at 5 V at 77 K	3.65 μm
[22]	17%	PC	CVD	–	0.004 at 2.4 μm at $\sim 1 V$ at RT	4.6 μm
This work	16.3%	PC	MBE	$9.33 \times 1 0^{8}$ at 77 K	0.35 at 2.53 μm at 1 V at 77 K	4.2 μm

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Xiangquan Liu, Jun Zheng, Chaoqun Niu, Taoran Liu, Qinxing Huang, Mingming Li, Diandian Zhang, Yaqing Pang, Zhi Liu, Yuhua Zuo, Buwen Cheng, "Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors," Photonics Res. 10, 1567 (2022)

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Paper Information

Category: Silicon Photonics

Received: Feb. 10, 2022

Accepted: May. 17, 2022

Published Online: Jun. 8, 2022

The Author Email: Jun Zheng (zhengjun@semi.ac.cn)

DOI:10.1364/PRJ.456000

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Summary of Growth Temperature (Tgrowth), Sn Crucible Temperature (TSn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samplesa

Table 1. Summary of Growth Temperature (Tgrowth), Sn Crucible Temperature (TSn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samplesa

Table 2. Summary of the Performance of GeSn Photodetectorsa

Table 2. Summary of the Performance of GeSn Photodetectorsa

Table 1. Summary of Growth Temperature (T_growth), Sn Crucible Temperature (T_Sn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samples^a

Table 1. Summary of Growth Temperature (T_growth), Sn Crucible Temperature (T_Sn), Measured Sn Content (x), and Root Mean Square (RMS) Roughness of GeSn Samples^a

Table 2. Summary of the Performance of GeSn Photodetectors^a

Table 2. Summary of the Performance of GeSn Photodetectors^a