Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu; Jun Zheng; Chaoqun Niu; Taoran Liu; Qinxing Huang; Mingming Li; Diandian Zhang; Yaqing Pang; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.1364/PRJ.456000

Photonics Research, Volume. 10, Issue 7, 1567(2022)

Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu^1,2, Jun Zheng^1,2、*, Chaoqun Niu^1,2, Taoran Liu^1,2, Qinxing Huang^1,2, Mingming Li^1,2, Diandian Zhang^1,2, Yaqing Pang^1,2, Zhi Liu^1,2, Yuhua Zuo^1,2, and Buwen Cheng^1,2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Xiangquan Liu, Jun Zheng, Chaoqun Niu, Taoran Liu, Qinxing Huang, Mingming Li, Diandian Zhang, Yaqing Pang, Zhi Liu, Yuhua Zuo, Buwen Cheng, "Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors," Photonics Res. 10, 1567 (2022)

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Paper Information

Category: Silicon Photonics

Received: Feb. 10, 2022

Accepted: May. 17, 2022

Published Online: Jun. 8, 2022

The Author Email: Jun Zheng (zhengjun@semi.ac.cn)

DOI:10.1364/PRJ.456000

Topics

laser devices and laser physics

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