Selective Etching Technologies for GaAs/AlGaAs in Vertical-Cavity Surface-Emitting Lasers

Zhang Qiubo; Feng Yuan; Li Hui; Yan Changling; Hao Yongqin

doi:10.3788/CJL202047.0401001

Chinese Journal of Lasers, Volume. 47, Issue 4, 401001(2020)

Selective Etching Technologies for GaAs/AlGaAs in Vertical-Cavity Surface-Emitting Lasers

Zhang Qiubo, Feng Yuan, Li Hui, Yan Changling, and Hao Yongqin^*

National Key Laboratory of Science and Technology on High Power Semiconductor Lasers,Changchun University of Science and Technology, Changchun, Jilin 130022, China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(9)

Fig. 1. Etching depth versus time of different etching solutions

Download full size

Fig. 2. SEM pictures of different etching solutions. (a) 1∶1∶7; (b) 1∶1∶10; (c) 1∶1∶13

Download full size

Fig. 3. Etching depth versus time under different RF powers

Download full size

Fig. 4. SEM pictures under different RF powers. (a) 60 W; (b) 80 W; (c) 100 W; (d) 110W

Download full size

Fig. 5. Chemical reaction diagram of ICP etching

Download full size

Fig. 6. SEM pictures under different BCl₃ flow rates. (a) 3 sccm; (b) 5 sccm; (c) 7 sccm

Download full size

Table 1. Volume ratio of H₃PO₄-H₂O₂-H₂O solution
View table
Table 1. Volume ratio of H₃PO₄-H₂O₂-H₂O solution
Group Volume ratio
A1 1∶1∶7
A2 1∶1∶10
A3 1∶1∶13

Table 2. Etching parameters under different RF powers of ICP
View table
Table 2. Etching parameters under different RF powers of ICP
Group Cl₂ /sccm BCl₃ /sccm Ar /sccm RF power /W ICP power /W
B1 20 5 5 60 400
B2 20 5 5 70 400
B3 20 5 5 80 400
B4 20 5 5 90 400
B5 20 5 5 100 400
B6 20 5 5 110 400

Table 3. Etching parameters under different BCl₃ flows
View table
Table 3. Etching parameters under different BCl₃ flows
Group Cl₂ /sccm BCl₃ /sccm Ar /sccm RF power /W ICP power /W
C1 20 3 5 100 400
C2 20 5 5 100 400
C3 20 7 5 100 400

Tools

Get Citation

Copy Citation Text

Zhang Qiubo, Feng Yuan, Li Hui, Yan Changling, Hao Yongqin. Selective Etching Technologies for GaAs/AlGaAs in Vertical-Cavity Surface-Emitting Lasers[J]. Chinese Journal of Lasers, 2020, 47(4): 401001

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites