Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 49, Issue 13, 1306002(2022)

Avalanche Photodiode with p-down Structure for 100 Gb/s Optical Communication System

Zhuodong Liao, Ke Li, Haoran Liu, Xiaofeng Duan*, Yongqing Huang, and Kai Liu
Author Affiliations
  • State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (11)
    Equations (0)
    References (16)
    Cited By (3)
    Tools
    Paper Information
    Topics
    Figures & Tables(11)
    Structure of p-down APD with double-mesa. (a) Schematic of cross-sectional view; (b) band diagrams

    Fig. 1. Structure of p-down APD with double-mesa. (a) Schematic of cross-sectional view; (b) band diagrams

    Download full size
    Carrier transition time changed with thickness ratio of p-type absorption layer

    Fig. 2. Carrier transition time changed with thickness ratio of p-type absorption layer

    Download full size
    Electric field distribution of p-down APD with double-mesa structure at operating bias condition

    Fig. 3. Electric field distribution of p-down APD with double-mesa structure at operating bias condition

    Download full size
    Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with double-mesa structure

    Fig. 4. Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with double-mesa structure

    Download full size
    I-V curves of p-down APD with double-mesa structure

    Fig. 5. I-V curves of p-down APD with double-mesa structure

    Download full size
    Frequency response curve of p-down APD with double-mesa structure

    Fig. 6. Frequency response curve of p-down APD with double-mesa structure

    Download full size
    Schematic of cross-sectional view of p-down APD with triple-mesa structure

    Fig. 7. Schematic of cross-sectional view of p-down APD with triple-mesa structure

    Download full size
    Electric field distribution of p-down APD with triple-mesa structure at operating bias condition

    Fig. 8. Electric field distribution of p-down APD with triple-mesa structure at operating bias condition

    Download full size
    Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with triple-mesa structure

    Fig. 9. Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with triple-mesa structure

    Download full size
    I-V curves of p-down APDs with two mesa structures

    Fig. 10. I-V curves of p-down APDs with two mesa structures

    Download full size
    Frequency response curves of p-down APDs with two mesa structures

    Fig. 11. Frequency response curves of p-down APDs with two mesa structures

    Download full size
    Tools

    Get Citation

    Copy Citation Text

    Zhuodong Liao, Ke Li, Haoran Liu, Xiaofeng Duan, Yongqing Huang, Kai Liu. Avalanche Photodiode with p-down Structure for 100 Gb/s Optical Communication System[J]. Chinese Journal of Lasers, 2022, 49(13): 1306002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Fiber optics and optical communication

    Received: Nov. 16, 2021

    Accepted: Jan. 4, 2022

    Published Online: Jun. 27, 2022

    The Author Email: Duan Xiaofeng (xfduan@bupt.edu.cn)

    DOI:10.3788/CJL202249.1306002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology