Peripheral photoinhibition (PPI) direct laser writing (DLW) is a lithography technology used to improve the feature size in two-photon polymerization (2PP) DLW.1
Advanced Photonics, Volume. 4, Issue 6, 066002(2022)
Direct laser writing breaking diffraction barrier based on two-focus parallel peripheral-photoinhibition lithography Author Presentation
Direct laser writing (DLW) enables arbitrary three-dimensional nanofabrication. However, the diffraction limit poses a major obstacle for realizing nanometer-scale features. Furthermore, it is challenging to improve the fabrication efficiency using the currently prevalent single-focal-spot systems, which cannot perform high-throughput lithography. To overcome these challenges, a parallel peripheral-photoinhibition lithography system with a sub-40-nm two-dimensional feature size and a sub-20-nm suspended line width was developed in our study, based on two-photon polymerization DLW. The lithography efficiency of the developed system is twice that of conventional systems for both uniform and complex structures. The proposed system facilitates the realization of portable DLW with a higher resolution and throughput.
1 Introduction
Peripheral photoinhibition (PPI) direct laser writing (DLW) is a lithography technology used to improve the feature size in two-photon polymerization (2PP) DLW.1
Previous scholars have reported minimum lateral feature sizes below 100 nm.1,11,14 Cao et al.15 achieved a 40-nm feature size and a 130-nm resolution with excitation and inhibition beam wavelengths of 488 and 375 nm, respectively. Gan et al.8 achieved a single line with a 9-nm feature size and two adjacent lines with a 52-nm resolution using excitation and inhibition beam wavelengths of 800 and 375 nm, respectively. He et al.16 applied a twin-oval-shaped beam instead of a doughnut-shaped beam in PPI-DLW with excitation and inhibition beam wavelengths of 800 and 532 nm, respectively, and stably obtained a 45-nm single nanowire.
DLW is remarkably advantageous, due to its maskless and vacuum-free operation, three-dimensional (3D) lithography capability,17 and cost-effectiveness.18
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However, the throughput of single-beam/spot DLW is a noticeable disadvantage that greatly restricts the applicability of PPI-DLW.31 This problem can be addressed by performing parallel lithography with multifocal arrays, especially when fabricating periodic structures.32
Among these devices, SLMs36
To overcome these challenges and restrictions, this paper reports a parallel peripheral-photoinhibition lithography (
2 Materials and Methods
2.1 Proposed System
For the excitation and inhibition beams, the polarization property of light is used to generate two focal spots by utilizing an SLM, corresponding to the s- and p-polarized components of the beam. Individual and dynamic on–off and aberration control can be realized for both the excitation and inhibition spots. Figure 1(a) provides a schematic of the proposed system, and Fig. 1(b) depicts its physical arrangement. The system includes eight modules numbered 1–8, as shown in Fig. 1(b). First, the s- and p-polarized components of the beam are split so that they can be individually controlled; then they are modulated by the left and right tilt phase masks (loaded on the SLM) so that the s- and p-components generate two separate spots after focusing. The distances between the spots and their positions can be adjusted using the tilt coefficient. For the inhibition beam, a vortex phase (loaded on the SLM) is utilized to generate a doughnut spot. The wavelength of the excitation beam is 780 nm (Coherent, Chameleon Vision II, 3 W, Glasgow, UK; pulsed 80-MHz repetition rate), and that of the inhibition beam is 532 nm (Laser Quantum, Opus 532-5W, Stockport, UK; continuous wave). Modules 1 and 2, 3 and 4, and 5 and 6 are the same; they differ only in having different optical elements fit for different wavelengths. Modules 1 and 2 (MRC, Heidelberg, Germany) are used for beam-pointing stabilization. Modules 3 and 4 first split the excitation/inhibition beam into two beams using a polarizing beam splitter (PBS), so that the individual on–off control of each beam can be realized using an acoustic-optical modulator (AOM). Then the two beams are recombined using another PBS. Modules 5 and 6 perform phase modulation using SLMs. The polarization property of SLMs is completely leveraged; the s- and p-components are modulated by different areas on the SLM screen, and a quarter-wave plate is used for the polarization shift.45,46 In module 7, the excitation and inhibition beams are combined and then successively passed through a galvanometer scanner (CTI, 8310K, Lexington, Massachusetts) and a scan lens (Nikon, PROJ-XSD007835 A1, Tokyo, Japan). In module 8, a microscope with an objective lens (Nikon, NA 1.45,
Figure 1.Proposed
The scanning imaging function was utilized to verify the quality of the spots (two excitation solid spots and two inhibition doughnut spots) by imaging 150-nm-diameter gold beads, as shown in Figs. 1(c) and 1(d), in which one excitation solid spot and one inhibition doughnut spot are superposed in three dimensions. The
2.2 PSF Verification and Image Acquisition
The galvanometer, AOM, piezostage, and trigger signals to the PMT were controlled by external voltages. An eight-channel analog-out card (National Instruments, NI PXIe-6733, Austin, Texas) provided these voltage signals, and another DAQ card (National Instruments, NI PXIe-6363, Austin, Texas) was used for data acquisition. The two cards were synchronized via a PXIe chassis (National Instruments, NI PXIe-1073, Austin, Texas), which was controlled through a manufacturer-supplied dynamic link library and C++ software developed in-house. Scanning could be conducted in any region of interest in the
2.3 Printing Manner and Monitoring
Except for the cubic metamaterial sample, which was printed in a dip-in manner, all the samples in this study were printed in the conventional oil–substrate–photoresist manner: the objective lens on the inverted microscope was immersed in oil and the photoresist was presented on the substrate. We used a glass slide as a substrate (refractive index: 1.51) and fixed it on the piezostage using a specially designed adaptor holder. The widefield image was acquired by a charge-coupled device camera, and the software was provided by the manufacturer. Four instant snapshots taken during the parallel printing process for the two lines of text are shown in Fig. S7(c) in the Supplementary Material (Video 1, MP4, 6.995 MB [URL: https://doi.org/10.1117/1.AP.4.6.066002.s1]). The substrate was illuminated from above by a light-emitting diode light source (wavelength, 625 nm, Thorlabs, CHROLITS-C1, Newton, New Jersey; driver, Thorlabs, LEDD1B, Newton, New Jersey). All the laser powers were measured at the aperture before the objective lens on the microscope by a power meter (power sensor, S121C, Thorlabs; power and energy meter console, Thorlabs, Newton, New Jersey).
2.4 Materials and Sample Processing
A formulation containing 0.5 g of 7-diethylamino-3-thenoylcoumarin, 8.6 g of tricyclodecane dimethanol diacrylate, 0.7 g of ethoxylated bisphenyl fluorene diacrylate, and 0.7 g of o-phenyl phenoxyethyl acrylate was used as the sample photoresist.49 The exposed samples were developed in propylene glycol 1-monomethyl ether 2-acetate for 15 min, followed by rinsing in isopropanol for 5 min. A 2-nm-thick gold layer was evaporated on the samples prior to topography observation.
3 Results
3.1 2D Sub-40-nm Feature Size Verification
We printed a nanowire on a glass substrate (
Figure 2.Two-dimensional feature size verification experiment results. (a) Feature size versus inhibition beam intensity under excitation beam exposure with different powers. (b) SEM image of the nanowire obtained at the point in the red box in (a). After the PPI is turned on, the line width is compressed from 138.8 to 39.8 nm. Scale bar: 100 nm.
3.2 Bit Dot Pattern Printing
Because large data-recording systems are important potential applications of multifocal DLW, we printed a bit pattern to verify the feasibility of our system. The pattern in Fig. 2 was pixelated and reprinted using PPI-2PP and 2PP. The pitch of the bits was set to 200 nm. The dwell time of one dot was
Figure 3.Bit-pattern-printing results. (a) Full-view SEM image of the printed pattern. The pattern shows two lines of text and is pixelated. Top line: Chinese words, printed by channel 1 with PPI; bottom line: English words (translation of the text in the top line), printed by channel 2 without PPI. Scale bar:
3.3 Three-Dimensional Structure Printing
To test the parallel printing of an actual 3D nanostructure, a metamaterial architecture50 (a cube) was printed. This cube was used as a bench sample in Ref. 42. Here we considered two cells as bench samples: one containing
Figure 4.Metamaterial cubic-unit printing results: (a) SEM image of a
To demonstrate the feasibility of the 3D fabrication method further, additional 3D structures were printed. First, two cubic frames were printed by the two spots simultaneously. The two frames were of the same size but had different patterns (squares and circles), as shown in Fig. 5(a). Each spot printed one frame, the separation of the two spots was
Figure 5.Oblique-view SEM images of 3D nanostructures parallel-printed using two spots. (a) Two cubical box frames, (b) periodic structure: hexagonal fence, (c) wire structure: nanophotonic wires, and (d) spherical structure: buckyball model. Scale bars:
4 Discussion and Outlook
Multifocus parallel scanning and the PPI technique can enable potential breakthroughs in DLW optical fabrication. Herein, we proposed a two-focus parallel scanning strategy with minimal hardware updates for system stability. Furthermore, the identical on–off control of each focus verifies the possibility of rapid parallel lithography of nonperiodic patterns and structures, increasing the flexibility of DLW. The proposed method enables rapid and identical on–off control of each focus with a modulation frequency on the order of a megahertz, which can also be achieved using an SLM. However, the SLM frequency is the maximum possible on–off frequency, and the typical frame rate of the SLM is only 60 Hz (the highest is 1 kHz, which is still considerably lower than the AOM frequency). If the pattern to be printed is significantly complex and nonperiodic, resulting in a beam on–off frequency on the order of a megahertz, a system that uses an SLM to generate multiple foci is unsuitable. One solution to this problem is to decrease the scanning speed to lower the on–off frequency. Notably, it is difficult to realize parallel printing of complex and nonperiodic patterns by employing an SLM alone without compromising the scanning speed. Our method addresses this problem using an AOM to modulate every subbeam. It can, therefore, enable the parallel printing of nonperiodic and complex patterns without compromising the scanning speed. Moreover, because our system uses SLMs, it can still generate multiple foci to print identical patterns or use a relatively low on–off beam frequency to print nonidentical ones.
For a DLW system, reducing the time cost required to fabricate large-scale structures or patterns is a major challenge. Parallel scanning is a feasible solution to this problem. However, another important issue is related to the stitching process, particularly for systems using galvanometer scanners. In the proposed system, the separation distance between the two spots can be controlled by adjusting the tilt parameter following the Zernike polynomials. However, it is impossible to increase the distance without any limits. Therefore, when printing certain large structures or patterns, a stitching process is required, which introduces artifact-related issues. The mechanism that causes artifacts in the stitching process is complicated. The factors affecting this mechanism include the properties of the photoresist; mechanical properties of the structure to be printed; printing parameters; and uniformity in the shape, power, and focus depth of the two spots. In galvanometer-based multifocal-spot systems, stitching-induced artifacts constitute a considerable problem that should be addressed in the future research.
The proposed system can provide a sub-50-nm feature size in direct-writing lithography and extend the potential application range of DLW optical fabrication. In particular, for the fabrication of certain 3D structures with dimensions of several hundred nanometers, traditional 2PP-DLW with a feature size of more than 100 nm may encounter sampling and subdivision issues owing to the relatively large pixel volumes, which may lead to increased roughness of the fabricated structures. Electron beam lithography provides smaller feature sizes; however, its ability to fabricate special 3D structures is quite limited. By using PPI, the proposed system enables the DLW optical fabrication of various fine 3D structures, such as those of nanoscale optical elements including blazed gratings, microlens arrays, microfluidic structures, and metasurfaces. Therefore, the proposed system can serve as a useful tool for supporting the development of numerous fields.
5 Conclusion
Our proposed
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Dazhao Zhu, Liang Xu, Chenliang Ding, Zhenyao Yang, Yiwei Qiu, Chun Cao, Hongyang He, Jiawei Chen, Mengbo Tang, Lanxin Zhan, Xiaoyi Zhang, Qiuyuan Sun, Chengpeng Ma, Zhen Wei, Wenjie Liu, Xiang Fu, Cuifang Kuang, Haifeng Li, Xu Liu, "Direct laser writing breaking diffraction barrier based on two-focus parallel peripheral-photoinhibition lithography," Adv. Photon. 4, 066002 (2022)
Category: Research Articles
Received: Aug. 21, 2022
Accepted: Nov. 1, 2022
Posted: Nov. 2, 2022
Published Online: Nov. 25, 2022
The Author Email: Kuang Cuifang (cfkuang@zju.edu.cn), Liu Xu (liuxu@zju.edu.cn)