[1] L R Jiang, J P Liu, A Q Tian et al. GaN-based green laser diodes. J Semicond, 37, 111001(2016).

[2] P Crump, G Erbert, H Wenzel et al. Efficient high-power laser diodes. J Sel Top Quantum Electron, 19, 1501211(2013).

[3] J Piprek, U States. What limits the power conversion efficiency of GaN-based lasers. SPIE, 98, 3(2017).

[4] T Miyoshi, S Masui, T Okada et al. 510–515 nm InGaN-based green laser diodes on c-plane GaN substrate. Appl Phys Express, 2, 062201(2009).

[5] A A Yamaguchi, M Kuramoto, M Nido et al. An alloy semiconductor system with a tailorable band-tail and its applications to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN material system designed for quantum well laser operation. Semicond Sci Technol, 16, 763(2001).

[6] W W Chow, A F Wright, A Girndt et al. Microscopic theory of gain for an InGaN/AlGaN quantum well laser. Appl Phys Lett, 71, 2608(1997).

[7] R Butté, L Lahourcade, T K Uždavinys et al. disorder and growth mode induced fluctuations optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations. Appl Phys Lett, 112, 032106(2018).

[8] M Glauser, G Rossbach et al. Investigation of InGaN/GaN quantum wells for polariton laser diodes. Phys Status Solidi, 9, 1325(2012).

[9] U T Schwarz. Investigation and comparison of optical gain spectra of (Al,In) GaN laser diodes emitting in the 375nm to 470 nm spectral range. Proc SPIE, 648506(2007).

[10] B W Hakki, T L Paoli. cw degradation at 300 K of GaAs double-heterostructure junction laser. II. Electronic gain. J Appl Phys, 44, 4113(1973).

[11] B W Hakki, T L Paoli. Gain spectra in GaAs double-heterostructure injection lasers. J Appl Phys, 46, 1299(1974).

[12] S L Chuang, C S Chang. k·p method for strained wurtzite semiconductors. Phys Rev B, 54, 2941(1996).

[13]

[14] W W Chow, S W Koch. Semiconductor-laser fundamentals: physics of the gain materials. Spring, 12(1999).

[15] H P Zhao, R A Arif, N Tansu. Self-consistent gain analysis of type-II self-consistent gain analysis of type-II ‘W’ InGaN - GaNAs quantum well. J Appl Phys, 104, 043104(2016).

[16]

[17]

[18] A Portis. Inhomogeneous line-broadening in F centers. Phys Rev, 91, 1071(1971).

[19] Q Li. A model for steady-state luminescence of localized-state ensemble. Europhys Lett, 71, 994(2005).

[20] Q Li. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Appl Phys Lett, 79, 1810(2001).

[21] U T Schwarz, E Sturm, W Wegscheider et al. Gain spectra and current-induced change of refractive index in (In/Al) GaN diode lasers. Phys Status Solidi A, 200, 143(2003).

[22] M J Bergmann, H C Casey. Optical-field calculations for lossy multiple-layer Al_xGa_1-xN/In_xGa_1-xN laser diodes. J Appl Phys, 84, 1196(1998).

[23] T Lermer, M Schillgalies, A Breidenassel et al. Waveguide design of green InGaN laser diodes. Phys Status Solidi A, 207, 1328(2010).

[24] L Zhang, D Jiang, J Zhu et al. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green. J Appl Phys, 105, 023104(2009).